Indium Tin Oxide Thin Films Deposited at Low Temperature Using Dual Ion Beam Sputtering

2014 ◽  
Vol 1699 ◽  
Author(s):  
Wilhelmus J. Geerts ◽  
Nelson A. Simpson ◽  
Alan D. Woodall ◽  
Maclyn Stuart Compton
Keyword(s):  
Flow Rate ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

ABSTRACTITO samples were sputtered at room temperature by ion assisted dual ion beam sputtering using atomic or molecular oxygen. The electrical properties appear to depend on the oxygen flow rate during deposition and the resistivity decreases for samples sputtered at a higher oxygen flow rate (1-5 sccm). The resistivity is lowest at an oxygen flow rate of 4 sccm. The average absorption in the visible part of the spectrum also decreases as a function of the oxygen flow rate and is lower for samples sputtered with atomic oxygen. The figure of merit, i.e. the ratio of the conductivity versus the average absorption in the visible range, increases for higher oxygen flow rates and is typically 20-60% higher for samples sputtered using an atomic oxygen assist beam.

scholarly journals Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 517
Author(s):  
Pengfei Kong ◽  
Yunti Pu ◽  
Ping Ma ◽  
Jiliang Zhu
Keyword(s):  
Refractive Index ◽  
Surface Quality ◽  
Flow Rate ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Scandium Oxide ◽  
Oxygen Flow ◽  
Ion Beam Sputtering ◽  
Oxygen Defects ◽  
Beam Sputtering

Scandium oxide (Sc2O3) thin films with different numbers of oxygen defects were prepared by ion-beam sputtering under different oxygen flow rates. The results showed that the oxygen defects heavily affected crystal phases, optical properties, laser-induced damage threshold (LIDT) and surface quality of Sc2O3 films. The thin film under 0 standard-state cubic centimeter per minute (sccm) oxygen flow rate had the largest number of oxygen defects, which resulted in the lowest transmittance, LIDT and the worst surface quality. In addition, the refractive index of 0 sccm Sc2O3 film could not be measured in the same way. When the oxygen flow rate was 15 sccm, the Sc2O3 film possessed the best transmittance, refractive index, LIDT and surface roughness due to the lowest number of oxygen defects. This work elucidated the relationship between oxygen defects and properties of Sc2O3 films. Controlling oxygen flow rate was an important step of limiting the number of oxygen defects, which is of great significance for industrial production.

Effect of oxygen flow rate on microstructure properties of SiO2 thin films prepared by ion beam sputtering

2018 ◽  
Vol 482 ◽  
pp. 203-207 ◽  
Author(s):  
Lishuan Wang ◽  
Yugang Jiang ◽  
Chenghui Jiang ◽  
Huasong Liu ◽  
Yiqin Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

Electrical and Optical Properties of Permalloy Oxide grown by dual ion beam sputtering.

2014 ◽  
Vol 1708 ◽  
Author(s):  
Maclyn Stuart Compton ◽  
Nelson A. Simpson ◽  
Elizabeth G. LeBlanc ◽  
Michael A. Robinson ◽  
Wilhelmus J. Geerts
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Optical Measurements ◽  
Ion Beam Sputtering ◽  
Electrical And Optical Properties ◽  
Optical Refraction ◽  
Beam Sputtering ◽  
Reproducible Method ◽  
Dual Ion Beam Sputtering

ABSTRACTElectrical and Optical measurements were carried out on permalloy oxide (PyO) thin films made by reactive dual ion beam sputtering at room temperature. VSM measurements at room temperature and 15 Kelvin did not reveal any magnetic moment in 120 nm thick films. The optical refraction and extinction spectra from 200-1000 nm were determined from ellipsometry measurements using a Cody-Lorentz model and provided in a reproducible method to determine the film thickness of PyO films on different substrate materials. PyO is transparent above 700 nm and is strongly absorbing below 500 nm. The resistivity values of PyO samples sputtered at room temperature depend on the oxygen flow rate and is approximately 4E3 Ohm cm for films prepared at 10 sccm. The resistivity of PyO decreases as a function of temperature. The dielectric constant is strongly frequency dependent, decreasing from 500 at 500 Hz to 10 at 1 MHz.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

scholarly journals Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering

2014 ◽  
Vol 22 (25) ◽  
pp. 30983 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Shruti Verma ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Heterojunction Diode ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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