Microstructure Development of Spark Plasma Sintered Silicon Carbide with Al-B-C

2005 ◽  
Vol 42 (8) ◽  
pp. 567-574 ◽  
Keyword(s):  
Silicon Carbide ◽  
Microstructure Development ◽  
Spark Plasma ◽  
Sintered Silicon

scholarly journals Microstructural designs of spark-plasma sintered silicon carbide ceramic scaffolds

2014 ◽  
Vol 53 (2) ◽  
pp. 93-100 ◽  
Author(s):  
B. Román-Manso ◽  
Á. De Pablos ◽  
M. Belmonte ◽  
M. I. Osendi ◽  
P. Miranzo
Keyword(s):  
Silicon Carbide ◽  
Silicon Carbide Ceramic ◽  
Spark Plasma ◽  
Sintered Silicon

The effect of silicon carbide on the mechanical and thermal behavior of spark plasma sintered silicon nitride ceramics with Al2O3 and Y203 additives

2019 ◽  
Vol 6 (5) ◽  
pp. 055019
Author(s):  
Ntombikazi Jojo ◽  
Mxolisi Brendon Shongwe ◽  
Peter Apata Olubambi ◽  
Lerato Criscelda Tshabalala
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Thermal Behavior ◽  
Nitride Ceramics ◽  
Spark Plasma ◽  
Sintered Silicon

Effects of Vickers Cracks on the Mechanical Properties of Solid-phase-sintered Silicon Carbide Ceramics

2012 ◽  
Vol 27 (9) ◽  
pp. 965-969
Author(s):  
Xiao YANG ◽  
Xue-Jian LIU ◽  
Zheng-Ren HUANG ◽  
Gui-Ling LIU ◽  
Xiu-Min YAO
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Solid Phase ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Sintered Silicon

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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