Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Absorption Coefficient ◽  
Pulsed Laser Deposition ◽  
Extinction Coefficient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cutoff Wavelength ◽  
Nanostructured Silicon

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

scholarly journals SnS thin films prepared by H2S-free process and its p-type thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015112 ◽  
Author(s):  
Fan-Yong Ran ◽  
Zewen Xiao ◽  
Hidenori Hiramatsu ◽  
Keisuke Ide ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistor ◽  
Free Process ◽  
Sns Thin Films ◽  
P Type

Tunable electrical properties of NiO thin films and p-type thin-film transistors

2015 ◽  
Vol 592 ◽  
pp. 195-199 ◽  
Author(s):  
Yongyue Chen ◽  
Yajie Sun ◽  
Xusheng Dai ◽  
Bingpo Zhang ◽  
Zhenyu Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
P Type

scholarly journals The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

2015 ◽  
Vol 3 (6) ◽  
pp. 1172-1176 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Li Wang ◽  
Toan Dinh ◽  
Nam-Trung Nguyen ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Electrical Conductance ◽  
Nanocrystalline Silicon ◽  
Harsh Environments ◽  
Gauge Factor ◽  
Mems Sensors ◽  
Piezoresistive Effect ◽  
Nanocrystalline Silicon Carbide ◽  
P Type

A significant piezoresistive effect in p-type nanocrystalline SiC with a gauge factor of 14.5 was reported. This result indicates that p-type nanocrystalline SiC is a good candidate for MEMS sensors used in harsh environments and bio applications.

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

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