A Junction Electric Field Determination of a Bifacial Silicon Solar Cell under a Constant Magnetic Field Effect by Using the Photoconductivity Method

Numerical calculations for the cavity flow which simulates Joule-heated glass furnace were executed using GSMAC finite element method (GSMAC-FEM). The cavity consists of two main electrode plates on facing sides, two auxiliary electrode at the bottom and constant temperature wall on the top working as a heat sink. Magnetic field effect in Joule-heated glass furnace was verified by flow-electric-magnetic coupling analysis. When the calculation coupled with the flow and electric field was executed, unsteady down flows occurred from the top surface of the cavity. However, from the result of calculation coupled with flow, electric field and magnetic field, a large up flow appeared in the center of the cavity and permanently existed. Consequently, flow behavior including magnetic field was completely different from that excluding magnetic field effect. The results suggest that numerical analysis including magnetic field effect is recommended for accurate understanding of flow behavior in the Joule-heated glass furnaces. On the other hand, the data of velocity field, temperature field and magnetic field are also got by numerical simulation and compared with the result of Japan Atomic Energy Agency.

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In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions

AIP Advances ◽

10.1063/1.4959593 ◽

2016 ◽

Vol 6 (7) ◽

pp. 075014 ◽

Cited By ~ 14

Author(s):

C. Grezes ◽

A. Rojas Rozas ◽

F. Ebrahimi ◽

J. G. Alzate ◽

X. Cai ◽

...

Keyword(s):

Magnetic Field ◽

Thermal Stability ◽

Electric Field ◽

Field Effect ◽

Tunnel Junctions ◽

Magnetic Field Effect ◽

Magnetic Tunnel Junctions ◽

Switching Voltage

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Theoretical Study of a Bifacial Silicon Solar Cell Front Side Illuminated: Magnetic Field Effect on the Recombination Velocities Inducing the Short Circuit and Limiting the Open Circuit

International Journal of Emerging Technology and Advanced Engineering ◽

10.46338/ijetae0221_02 ◽

2021 ◽

Vol 11 (2) ◽

pp. 1-7

Author(s):

A. D. Péné ◽

◽

F. I. Barro ◽

M. Kamta ◽

L. Bitjoka ◽

...

Keyword(s):

Magnetic Field ◽

Solar Cell ◽

Silicon Solar Cell ◽

Short Circuit ◽

Magnetic Field Effect ◽

Photocurrent Density ◽

Open Circuit ◽

Cell Front ◽

Static Regime ◽

Recombination Velocity

The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity equation, the density of minority charge carriers in the base, the photocurrent density, and the phototension are determined. The study of the photocurrent density and the phototension, as a function of the junction recombination velocity, makes it possible to determine the recombination velocities at the junction initiating the short-circuit and limiting the open circuit respectively. From the profile of the variation of the photocurrent density and of the phototension as a function of the junction recombination velocity, a technique for determining the junction recombination velocities initiating the short circuit situation and limiting the open circuit is presented.

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