High Mobility Characteristics of Strained-Si-on-insulator (sSOI) Metal-oxide-semiconductors Field-effect-transistors (MOSFETs)

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2008.21.8.695 ◽

2008 ◽

Vol 21 (8) ◽

pp. 695-698

Author(s):

Kwan-Su Kim ◽

Won-Ju Cho

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductors ◽

Strained Si ◽

Oxide Semiconductors

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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1819976 ◽

2005 ◽

Vol 97 (1) ◽

pp. 011101 ◽

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald ◽

Mayank T. Bulsara ◽

Matthew T. Currie ◽

Anthony Lochtefeld

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.12192 ◽

2016 ◽

Vol 16 (5) ◽

pp. 4851-4855 ◽

Author(s):

Pyungho Choi ◽

Hyunjin Kim ◽

Sangsub Kim ◽

Soonkon Kim ◽

Reza Javadi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductors ◽

Oxide Semiconductors ◽

Charge Pumping ◽

Hot Carrier ◽

Thin Gate Oxide

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2High-kDielectric and Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c055 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C055 ◽

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Raj Jammy ◽

Raymond Joe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2990645 ◽

2008 ◽

Vol 93 (13) ◽

pp. 132902 ◽

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Feng Zhu ◽

M. Zhang ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

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Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.10.099 ◽

2013 ◽

Vol 529 ◽

pp. 444-448 ◽

Author(s):

B.-F. Hsieh ◽

S.T. Chang ◽

M.H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

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