Metal oxide semiconductor (MOS) gas sensors have the advantages of high sensitivity, short response-recovery time and long-term stability. However, the shortcoming of poor discriminability of homogeneous gases limits their applications in gas sensors. It is well-known that the MOS materials have similar gas sensing responses to homogeneous gases such as CO and H2, so it is difficult for these gas sensors to distinguish the two gases. In this paper, simple sol–gel method was employed to obtain the ZnO–xNiO composites. Gas sensing performance results illustrated that the gas sensing properties of composites with x > 0.425 showed a p-type response to both CO and H2, while the gas sensing properties of composites with x < 0.425 showed an n-type response to both CO and H2. However, it was interesting that ZnO–0.425NiO showed a p-type response to CO but an discriminable response (n-type) to H2, which indicated that modulating the p-type or n-type semiconductor concentration in p-n composites could be an effective method with which to improve the discriminability of this type of gas sensor regarding CO and H2. The phenomenon of the special gas sensing behavior of ZnO–0.425NiO was explained based on the experimental observations and a range of characterization techniques, including XRD, HRTEM and XPS, in detail.
Synthesis of Metal Oxide Semiconductor Nanostructures and Their Gas Sensing Properties
