scholarly journals SWIR Photosensory

2021 ◽  
Vol 9 (6) ◽  
pp. 479-498
Author(s):  
Konstantin Boltar ◽  
Igor Burlakov ◽  
Natalya Iakovleva ◽  
Alekcey Polessky ◽  
Peter Kuznetsov ◽  
...  

In this paper, we report on the design, the fabrication, and performance of SWIR photomodules using sensitive two-dimensional arrays based on InGaAs-heterostructures. The de- sign of suggested InGaAs-heterostructure includes InAlAs wideband barrier layer and high sensitive absorber InGaAs layer which are increasing the uniformity and operability of focal plane array (FPA), so the number of defect elements are less than 0.5 %. The possibilities of spectral range expanding into short-wavelength to 0.5 μm and into long-wavelength to 2.2 μm regions have been considered. The operation principals of active-pulse system for 0.9–1.7 μm spectral range based on InGaAs 320256 FPA with 30 μm pitch have been presented. The investigations showed that the infrared gated-viewing system based on the InGaAs 320256 FPA provided a spatial resolution of 0,6 m.

2010 ◽  
Vol 39 (7) ◽  
pp. 846-851 ◽  
Author(s):  
J. Wenisch ◽  
D. Eich ◽  
S. Hanna ◽  
A. Bauer ◽  
H. Bitterlich ◽  
...  

2001 ◽  
Vol 7 (S2) ◽  
pp. 148-149
Author(s):  
C.D. Poweleit ◽  
J Menéndez

Oil immersion lenses have been used in optical microscopy for a long time. The light’s wavelength is decreased by the oil’s index of refraction n and this reduces the minimum spot size. Additionally, the oil medium allows a larger collection angle, thereby increasing the numerical aperture. The SIL is based on the same principle, but offers more flexibility because the higher index material is solid. in particular, SILs can be deployed in cryogenic environments. Using a hemispherical glass the spatial resolution is improved by a factor n with respect to the resolution obtained with the microscope’s objective lens alone. The improvement factor is equal to n2 for truncated spheres.As shown in Fig. 1, the hemisphere SIL is in contact with the sample and does not affect the position of the focal plane. The focused rays from the objective strike the lens at normal incidence, so that no refraction takes place.


1984 ◽  
Vol 86 ◽  
pp. 215-218
Author(s):  
P. Mandelbaum ◽  
M. Klapisch ◽  
A. Krasnitz ◽  
A. Zigler

X-ray spectra of highly ionized atoms (Tm to Pt) emitted from Laser produced plasma are characterized by the simple structure given by resonant transitions of the Nil-like ions, accompanied by the more complex pattern of satellite transitions emitted by ions in the neighbouring states of ionization. An analysis of these structures has been given recently for the satellites of the 3d10 − 3d94p[l] and of the 3p63dl0 − 3p53d104s, 4d[2] transitions of the Nil-like inns. However, most of the radiation emitted in this spectral range [4–10Å] concentrate in a wide, rather structureless satellite feature in the long wavelength side of the 3d10 −3d94f Ni-I like transition, on which some lines are superimposed. Line identification has been achieved successfully with the methods of [1], [2] and will be published separately. In this communication, we deal only with the pseudocontinuum.


1990 ◽  
Vol 216 ◽  
Author(s):  
Paul A. Clifton ◽  
Paul D. Brown

ABSTRACTThe interface between Hg1-xCdxTe(0 ≦ x ≦ 1) and Hg1-yCdyTe(0 ≦ y ≦ 1) epitaxial layers of different composition (x ≠ y) is unstable with regard to the intermixing of the Hg and Cd cations within the Group II sublattice. This phenomenon may give rise to long-term stability problems in HgTe-(Hg,Cd)Te superlattices and composition grading between (Hg,Cd)Te absorber layers and CdTe buffer or passivation layers in epitaxial infra red detectors. In this paper, a novel approach to the inhibition of interdiffusion in these systems is discussed. This involves the growth of an intervening ZnTe barrier layer at the heterointerface between two (Hg,Cd)Te layers. Initial results are presented which indicate the effectiveness of this technique in reducing interdiffusion in an experimental heterostructure grown by MOVPE. Some possible applications in a variety of HgTe-based long wavelength devices are discussed.


2012 ◽  
Author(s):  
Norbert Meidinger ◽  
Robert Andritschke ◽  
Florian Aschauer ◽  
Johannes Elbs ◽  
Tanja Eraerds ◽  
...  
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