A Study on the Reduction of Gate Signal Distortion of a Pulsed Power Modulator Using Pulse Transformer Type Gate Circuit

2021 ◽  
Vol 35 (1) ◽  
pp. 23-27
Author(s):  
Seung-Ho Song ◽  
Seung-Hee Lee ◽  
Hong-Je Ryoo
Keyword(s):  
Pulsed Power ◽  
Pulse Transformer ◽  
Signal Distortion ◽  
Gate Signal ◽  
Gate Circuit ◽  
Transformer Type

Solid-State Pulsed Power Generator Based on Blumlein PFN Using Saturable Pulse Transformer

2021 ◽  
Vol 49 (10) ◽  
pp. 3189-3192
Author(s):  
Longyu Zhuang ◽  
Junxiang Yang ◽  
Taichi Sugai ◽  
Akira Tokuchi ◽  
Weihua Jiang
Keyword(s):  
Solid State ◽  
Pulsed Power ◽  
Pulse Transformer ◽  
Power Generator ◽  
Pulsed Power Generator

A Compact All-Solid-State Repetitive Pulsed Power Modulator Based on Marx Generator and Pulse Transformer

2018 ◽  
Vol 46 (6) ◽  
pp. 2072-2078 ◽  
Author(s):  
Xia Wang ◽  
Qinghua Huang ◽  
Lin Xiong ◽  
Le Xu ◽  
Qiang Chen ◽  
...  
Keyword(s):  
Solid State ◽  
Pulsed Power ◽  
Pulse Transformer ◽  
Marx Generator

High Voltage SiC Vertical JFET for High Power RF Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1037-1040
Author(s):  
Christian Hecht ◽  
Rudolf Elpelt ◽  
Reinhold Schörner ◽  
Roland Irsigler ◽  
Oliver Heid
Keyword(s):  
High Power ◽  
Signal Propagation ◽  
Pulsed Power ◽  
Linear Accelerators ◽  
Switching Speed ◽  
Silicon Devices ◽  
Rf Transmitter ◽  
Lateral Channel ◽  
Gate Signal ◽  
Rf Applications

We present the optimization of a standard lateral channel vertical JFET for high-frequency high-power applications. It will be shown that SiC JFETs are well suited to fulfill the requirements of certain RF applications when compared to silicon devices. Simulations covering the electrical characteristics will be given together with calculations considering the self-heating of the chip in pulsed-power applications and the corresponding decrease in saturation current. The gate-signal propagation will be analyzed for different chip layouts and the effect on switching speed will be described. Electrical results will demonstrate that the optimized JFET is suitable for RF-transmitter applications, like e.g. solid state RF modules as Klystron replacements in linear accelerators.

Characteristics of Large Volume Discharges in Water using Pulsed Power

2003 ◽  
Vol 123 (7) ◽  
pp. 618-622 ◽  
Author(s):  
Hiroshi Nakashi ◽  
Tatsuya Hirooka ◽  
Sunao Katsuki ◽  
Hidenori Akiyama
Keyword(s):  
Large Volume ◽  
Pulsed Power

Study of SiC Device for Pulsed Power Switching Circuit

2019 ◽  
Vol 139 (8) ◽  
pp. 345-350
Author(s):  
Toru Tagawa ◽  
Tomohiko Yamashita ◽  
Takashi Sakugawa ◽  
Sunao Katsuki ◽  
Kenzi Hukuda ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Switching Circuit ◽  
Power Switching
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