scholarly journals Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
E. Gaubas ◽  
T. Ceponis ◽  
V. Kalendra ◽  
J. Kusakovskij ◽  
A. Uleckas
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Particle Detectors ◽  
Si Solar Cells ◽  
Diffusion Capacitance ◽  
Barrier Capacitance ◽  
Infra Red ◽  
The Impact ◽  
And Diffusion ◽  
Current Transients

Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.

IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 57-63 ◽  
Author(s):  
X. DENG ◽  
W. WANG ◽  
S. HAN ◽  
H. POVOLNY ◽  
W. DU ◽  
...  
Keyword(s):  
Solar Cells ◽  
Density Functional ◽  
Nanocrystalline Silicon ◽  
Functional Approach ◽  
Wide Bandgap ◽  
Quantum Size ◽  
Si Solar Cells ◽  
P Type ◽  
The Impact ◽  
Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

scholarly journals Influence of Different Types of Recombination Active Defects on the Integral Electrical Properties of Multicrystalline Silicon Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Dominik Lausch ◽  
Christian Hagendorf
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Short Circuit ◽  
Type A ◽  
Crystal Defects ◽  
Process Conditions ◽  
Type B ◽  
Si Solar Cells ◽  
Different Types ◽  
The Impact

In this contribution the influence of different types of recombination-active defects on the integral electrical properties of multicrystalline Si solar cells is investigated. Based on a previous classification scheme related to the luminescence behavior of crystal defects, Type-A and Type-B defects are locally distinguished. It is shown that Type-A defects, correlated to iron contaminations, are dominating the efficiency by more than 20% relative through their impact on the short circuit current ISC and open circuit voltage VOC in standard Si material (only limited by recombination active crystal defects). Contrarily, Type-B defects show low influence on the efficiency of 3% relative. The impact of the detrimental Type-A defects on the electrical parameters is studied as a function of the block height. A clear correlation between the area fraction of Type-A defects and both the global Isc and the prebreakdown behavior (reverse current) in voltage regime-2 (−11 V) is observed. An outlier having an increased full-area recombination activity is traced back to dense inter- and intragrain nucleation of Fe precipitates. Based on these results it is concluded that Type-A defects are the most detrimental defects in Si solar cells (having efficiencies > 15%) and have to be prevented by optimized Si material quality and solar cell process conditions.

The Impact of Nanomaterials on Fabrication Silicon Solar Cells by Pulsed Laser Deposition

2020 ◽  
Vol 30 ◽  
pp. 41-54
Author(s):  
Shelan A. Farman ◽  
Muayed K. Ibrahim ◽  
Kadhim A. Aadim
Keyword(s):  
Carbon Nanotubes ◽  
Solar Cells ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Si Solar Cells ◽  
Multi Walled Carbon Nanotubes ◽  
Uv Visible ◽  
Walled Carbon Nanotubes ◽  
The Impact

Nanocarbon structures such as graphene (GR), single-walled carbon nanotubes (SWCNTs) as well as the multi-walled carbon nanotubes (MWCNTs) were deposited on crystalline n-type silicon wafers to fabricate nanoCarbon-Si solar cells. Nanocarbon films deposited on glass and porous silicon (PS) via pulse laser deposition (PLD) with the use of Q-Switching Nd: YAG laser with λ=1064 (nm), Energy (E)=700 (mJ), Repetition rate (f)=6 (HZ) under vacuum condition with 2.5×10-2 (mbar). The surface morphology, structure, and optical Nanocarbon thin films have been examined with the use of X-ray Diffraction (XRD), Atomic force microscope (AFM), FTIR spectrophotometer and UV-visible. In addition, the power conversion efficiency that is related to the prepared solar cells is estimated through J-V characterization. The PCE of all Nanocarbon/PS follows the orders; SWCNTs/PS < MWCNTs/PS< GR/PS.

scholarly journals Spectroscopy of Technological Defects in Si Solar Cells by Analysis of Temperature Dependent Generation Currents

2014 ◽  
Vol 20 (3) ◽  
Author(s):  
Jevgenij PAVLOV ◽  
Darius BAJARŪNAS ◽  
Tomas ČEPONIS ◽  
Eugenijus GAUBAS ◽  
Dovilė MEŠKAUSKAITĖ
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Si Solar Cells ◽  
Technological Defects

On the Mechanism of Hydrogen Diffusion in Si Solar Cells Using PECVD SiN:H

2004 ◽  
Vol 813 ◽  
Author(s):  
B.L. Sopori ◽  
Y. Zhang ◽  
R. Reedy ◽  
K. M. Jones ◽  
Y. Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Hydrogen Diffusion ◽  
Surface Damage ◽  
Experimental Results ◽  
Metal Contact ◽  
Si Solar Cells ◽  
Transport And Diffusion ◽  
And Diffusion

ABSTRACTA mechanism for transport and diffusion of H in a silicon solar cell by PECVD SiN:H process is proposed. Plasma-induced surface damage “stores” H during the nitride deposition, which is driven into the bulk of the solar cell during metal-contact firing. Theoretical and experimental results are given that verify this mechanism.

The Role of Nano-crystallites on Conduction Mechanisms of Current Through Ag Gridlines of Si Solar Cells

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 311-318 ◽  
Author(s):  
Keming Ren ◽  
Tang Ye ◽  
Yong Zhang ◽  
Abasifreke Ebong
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Glass Layer ◽  
Transport Mechanisms ◽  
Raman Spectrometry ◽  
Si Solar Cells ◽  
Ag Crystallites ◽  
The One ◽  
The Impact

ABSTRACTIn order to understand the impact of nano-crystallites on current transport mechanisms in screen-printed c-Si solar cells with lowly-doped emitter, Te-glass based Ag pastes with different transition temperatures (Tg) were used. The Te-glass with lower Tg showed lower Rc than the one with higher Tg due to the formation of nano-crystallites in the glass layer. These nano-crystallites enhance the conductivity of the glass and lead to higher fill factor (FF). The nature of these nano-crystallites was first identified by the Raman spectrometry and the peaks at 76 cm-1, 119 cm-1 and 145 cm-1 were corresponding to Ag2Te and PbTe. The conductive-AFM further confirmed the high conductivity of these nano-crystallites without pyramidal Ag crystallites, which means the current transporting from Si emitter to Ag gridlines is mainly through the nano-crystallites in the glass.

Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers

2009 ◽  
Vol 156-158 ◽  
pp. 357-362 ◽  
Author(s):  
Emanuele Cornagliotti ◽  
Harold F.W. Dekkers ◽  
Caterina Prastani ◽  
Joachim John ◽  
Emmanuel Van Kerschaver ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cells ◽  
Recombination Centers ◽  
The Impact ◽  
Bulk Passivation

In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in multi-crystalline silicon (mc-Si) solar cells is presented. Layers are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Electrical bulk passivation is provided during thermal annealing, in which hydrogen diffuses from a-SiNx:H. The passivation effect is discussed in terms of recombination centers and non-recombinative charge traps reduction as well as in terms of local short circuit current improvement in specially manufactured solar cells.

INDUSTRIALIZATION OF a-Si SOLAR CELLS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  
Solar Cells ◽  
Si Solar Cells
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