Analysis of Self Heating Effect(SHE) according to Buried Oxide Thickness in SOI Nanowire FET

2017 ◽  
Vol 17 (5) ◽  
pp. 685-690
Author(s):  
Ilho Myeong ◽  
Dokyun Son ◽  
Hyunsuk Kim ◽  
Myounggon Kang ◽  
Hyungcheol Shin
Keyword(s):  
Oxide Thickness ◽  
Heating Effect ◽  
Self Heating ◽  
Buried Oxide

Numerical analysis of the self-heating effect in SGOI with a double step buried oxide

2011 ◽  
Vol 32 (3) ◽  
pp. 034001 ◽  
Author(s):  
Bin Li ◽  
Hongxia Liu ◽  
Jin Li ◽  
Bo Yuan ◽  
Lei Cao
Keyword(s):  
Numerical Analysis ◽  
The Self ◽  
Heating Effect ◽  
Double Step ◽  
Self Heating ◽  
Buried Oxide

scholarly journals Numerical simulation of Gate shape effect on Self-Heating in nano-MOSFET Transistors with high-k dielectric

2021 ◽  
Author(s):  
Maissa Belkheria ◽  
Fraj Echouchene ◽  
Abdullah Bajahzar ◽  
hafedh belmabrouk
Keyword(s):  
Dielectric Material ◽  
Oxide Thickness ◽  
Shape Effect ◽  
Heating Effect ◽  
The Finite Element Method ◽  
Self Heating ◽  
High K ◽  
High K Dielectric ◽  
Semiconductor Equations ◽  
Nano Mosfet

Abstract The aim of the present work is to investigate numerically the self-heating effect (SHE) in MOSFET transistors based on high-k material taking into account the deformation of the gate under the SHE. The SHE inside the MOSFET transistor is calculated using the electrothermal model based on heat transfer equation coupled with semiconductor equations. The electrothermal model have been solved in 2D-dimension using the finite element method. The high-k dielectric HfO2 have been used as gate oxide. Several gate shapes have been used to analyze their impact on SHE. It is observed that the reduction of equivalent oxide thickness (EOT) reduces the SHE in the MOSFET transistor based in high-k dielectric material. the temperature peak increases quadratically with drain voltage for all MOSFET structures. A decrease in self-heating effect is achieved using the square gate shape.

Thermal Conductivity of SOI LDMOS Device

2012 ◽  
Vol 571 ◽  
pp. 8-12
Author(s):  
Yan Xiong ◽  
Yu Shu Lai
Keyword(s):  
Thermal Conductivity ◽  
Characteristic Curve ◽  
Lower Surface ◽  
Negative Resistance ◽  
The Self ◽  
Oxide Semiconductor ◽  
Heating Effect ◽  
Field Plate ◽  
Self Heating ◽  
Buried Oxide

In this paper, the thermal conductivity of lateral double diffused metal oxide semiconductor (LDMOS) was studied. In order to optimize their properties, the LDMOS device based on the lower surface of field (RESURF) theory join the second field plate technology. Power device self-heating effect will affect the carrier mobility, making its negative resistance effect in IV characteristic curve under the high-power condition. As the thermal conductivity of SiO2 is low, the self-heating effect of SOI device is more obvious. The simulation using Silvaco -TCAD software for different buried oxide (BOX) with different SOI layer thickness accordingly show that the thicker SOI layer and the thinner buried oxide layer, the smaller the self-heating effect.

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