scholarly journals Electrical Insulation Weaknesses in Wide Bandgap Devices

2018 ◽  
Author(s):  
Mona Ghassemi
Keyword(s):  
Wide Bandgap ◽  
Electrical Insulation

scholarly journals Metallized ceramic substrate with mesa structure for voltage ramp-up of power modules

2019 ◽  
Vol 87 (2) ◽  
pp. 20903 ◽  
Author(s):  
Hélène Hourdequin ◽  
Lionel Laudebat ◽  
Marie-Laure Locatelli ◽  
Zarel Valdez-Nava ◽  
Pierre Bidan
Keyword(s):  
Field Enhancement ◽  
Wide Bandgap ◽  
Ceramic Substrate ◽  
Electrical Insulation ◽  
Shape Modification ◽  
Mesa Structure ◽  
Power Modules ◽  
Voltage Ramp ◽  
Bandgap Semiconductors ◽  
Semiconductor Chips

As the available wide bandgap semiconductors continuingly increase their operating voltages, the electrical insulation used in their packaging is increasingly constrained. More precisely the ceramic substrate, used in demanding applications, represents a key multi-functional element is being in charge of the mechanical support of the metallic track that interconnects the semiconductor chips with the rest of the power system, as well as of electrical insulation and of thermal conduction. In this complex assembly, the electric field enhancement at the triple junction between the ceramic, the metallic track borders and the insulating environment is usually a critical point. When the electrical field at the triple point exceeds the critical value allowed by the insulation system, this hampers the device performance and limits the voltage rating for future systems. The solution proposed here is based on the shape modification of the ceramic substrate by creating a mesa structure (plateau) that holds the metallic tracks in the assembly. A numerical simulation approach is used to optimize the structure. After the elaboration of the structures by ultrasonic machining we observed a significant increase (30%) in the partial discharge detection voltages, at 10 pC sensitivity, in a substrate with a mesa structure when comparing to a conventional metallized ceramic substrate.

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Editorial: Some aspects of solid electrical insulation

2003 ◽  
Vol 150 (2) ◽  
pp. 41-42
Author(s):  
R.A. Fouracre
Keyword(s):  
Electrical Insulation

2D/3D Perovskite Heterostructures for High Performance and High Open Circuit Voltage in Wide-Bandgap Perovskite Photovoltaics

2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

Organic Tandem Solar Cells with 15% Efficiency Employing Novel Wide Bandgap Nonfullerene Acceptor

2019 ◽  
Author(s):  
Yuliar Firdaus ◽  
Thomas D. Anthopoulos ◽  
Yuanbao Lin ◽  
Ferry Anggoro Ardy Nugroho ◽  
Emre Yengel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Wide Bandgap ◽  
Tandem Solar Cells ◽  
Nonfullerene Acceptor
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