scholarly journals Numerical simulation of the effect of rotating magnetic field on heat and mass transfer during AHP semiconductor crystal growth

2013 ◽  
Vol 6 (2) ◽  
pp. 168-175
Author(s):  
T.P. Lyubimova ◽  
O.A. Khlybov
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Mass Transfer ◽  
Crystal Growth ◽  
Heat And Mass Transfer ◽  
Rotating Magnetic Field ◽  
Semiconductor Crystal

Semiconductor Crystal Growth by the Vertical Bridgman Process With Transverse Rotating Magnetic Fields

2006 ◽  
Vol 129 (2) ◽  
pp. 241-243 ◽  
Author(s):  
X. Wang ◽  
N. Ma
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Applied Magnetic Field ◽  
Rotating Magnetic Field ◽  
Semiconductor Crystal ◽  
Rotating Magnetic Fields ◽  
Electrically Conducting ◽  
Vertical Bridgman ◽  
Bridgman Process

During the vertical Bridgman process, a single semiconductor crystal is grown by the solidification of an initially molten semiconductor contained in an ampoule. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper treats the flow of a molten semiconductor and the dopant transport during the vertical Bridgman process with a periodic transverse or rotating magnetic field. The frequency of the externally applied magnetic field is sufficiently low that this field penetrates throughout the molten semiconductor. Dopant distributions in the crystal are presented.

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

2000 ◽  
Vol 211 (1-4) ◽  
pp. 333-338 ◽  
Author(s):  
M. Selder ◽  
L. Kadinski ◽  
Yu. Makarov ◽  
F. Durst ◽  
P. Wellmann ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Mass Transfer ◽  
Crystal Growth ◽  
Heat And Mass Transfer ◽  
Bulk Crystal ◽  
Bulk Crystal Growth
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