Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations

2019 ◽  
Vol 507 ◽  
pp. 50-57 ◽  
Author(s):  
Thi Hoai Thu Nguyen ◽  
Jyh Chen Chen ◽  
Chieh Hu ◽  
Chun Hung Chen
Keyword(s):  
Numerical Simulation ◽  
Mass Transfer ◽  
Crystal Growth ◽  
Heat And Mass Transfer ◽  
Silicon Crystal ◽  
Czochralski Silicon

Transient and quasi-stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

2003 ◽  
Vol 38 (6) ◽  
pp. 499-505 ◽  
Author(s):  
A. Voigt ◽  
C. Weichmann ◽  
J. Nitschkowski ◽  
E. Dornberger ◽  
R. Hölz
Keyword(s):  
Mass Transfer ◽  
Crystal Growth ◽  
Heat And Mass Transfer ◽  
Silicon Crystal ◽  
Czochralski Silicon

Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm Czochralski silicon crystal growth

Rare Metals ◽  
2017 ◽  
Vol 36 (2) ◽  
pp. 134-141 ◽  
Author(s):  
Ran Teng ◽  
Yang Li ◽  
Bin Cui ◽  
Qing Chang ◽  
Qing-Hua Xiao ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Oxygen Distribution ◽  
Czochralski Silicon ◽  
Melt Convection

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

2000 ◽  
Vol 211 (1-4) ◽  
pp. 333-338 ◽  
Author(s):  
M. Selder ◽  
L. Kadinski ◽  
Yu. Makarov ◽  
F. Durst ◽  
P. Wellmann ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Mass Transfer ◽  
Crystal Growth ◽  
Heat And Mass Transfer ◽  
Bulk Crystal ◽  
Bulk Crystal Growth

Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Wijaranakula ◽  
Q. S. Zhang ◽  
K. Takano ◽  
H. Yamagishi
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Point Defect ◽  
Flow Pattern ◽  
Abrupt Change ◽  
Silicon Crystal ◽  
Crystal Growth Rate ◽  
Rate Theory ◽  
Czochralski Silicon

AbstractNumerical simulation of point defect distributions in a growing Czochralski silicon crystal with an abrupt change in the crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the silicon interstitials and the flow pattern defects and thus the crystal growth rate.

Numerical simulation of heat and mass transfer during sublimation drying of porcine aorta

2021 ◽  
pp. 1-14
Author(s):  
Chao Gui ◽  
Leren Tao ◽  
Weifang Yang ◽  
Yaqi Zhang ◽  
Shanshan Chen ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Mass Transfer ◽  
Heat And Mass Transfer
Sign in / Sign up

Export Citation Format

Share Document