Fabrication and Characterization of Organic Thin-Film Transistors by Using Polymer Gate Electrode

Polymer Korea ◽  
2011 ◽  
Vol 35 (4) ◽  
pp. 370-374 ◽  
Author(s):  
Hyun Seok Jang ◽  
Ki Gook Song ◽  
Sung Hyun Kim
2006 ◽  
Vol 965 ◽  
Author(s):  
Kaname Kanai ◽  
Suidong Wang ◽  
Kazuhiko Seki

ABSTRACTWe report the fabrication and characterization of the bottom contact organic thin film transistors and inverter based on a heterostructure of C60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm2V−1s−1 and 0.14 cm2V−1s−1, respectively. After exposure to air, the n-channel in C60 is completely degraded whereas the p-channel in pentacene keeps working. Both the n-channel and the p-channel are stable in N2 atmosphere. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. These results suggest a potential way to fabricate organic complementary circuits with a single organic heterostructure device.


2016 ◽  
Vol 119 (15) ◽  
pp. 154503 ◽  
Author(s):  
Daisuke Tadaki ◽  
Teng Ma ◽  
Jinyu Zhang ◽  
Shohei Iino ◽  
Ayumi Hirano-Iwata ◽  
...  

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