A comprehensive analytical model for ambipolar transport in nano-dimensional VOPc/p-6P OHJFET for applications in organic electronics

This paper presents a compact analytical DC model for high mobility VOPc (vanadyl pthalocyanine)/p-6P (para-sexiphenyl) ambipolar organic heterojunction field-effect transistor (OHJFET). The proposed model accounts for both unipolar and ambipolar regimes of VOPc/p-6P ambipolar OHJFET by considering spatial charge carrier density in the channel. The model incorporates subthreshold conduction phenomenon in addition to describing beyond threshold transport. The model is extended to describe ambipolar regime occurring in subthreshold region at low drain to source voltage, VDS. Device characteristics and various parameters obtained are presented and are further used to model recombination zone and channel potential profile. Results obtained, are compared with available experimental data and a good match is observed.

Ambipolar Transport in Two-Dimensional Sn-Based Perovskite Field-Effect Transistors Using an Aliphatic Polymer-Assisted Method

Two-dimensional layered Sn-based perovskites with superior carrier mobility and excellent compatibility with the horizontal charge transport in field-effect transistors are promising channel materials. However, ambipolar characteristics cannot be achieved and...

Gate-controlled Ambipolar Transport in b-AsP Crystal and Its VIS-NIF Photodetection

As a new two-dimensional elemental layered semiconductor, black phosphorus (b-P) has received tremendous attentions due to its excellent physical and chemical properties, and has potential applications in the fields of...