A Study on the Improvement of the Thermal Stability of PE Separator for Lithium Secondary Battery Application Using Poly(meta-phenylene isophthalamide)

Temperature programmed reduction (TPR) method was introduced to analyze the structural change and thermal stability of LixCoO2 (LCO) cathode material. The reduction peaks of delithiated LCO clearly represented the different phases of LCO. The reduction peak at a temperature below 250 °C can be attributed to the transformation of CoO2–like to Co3O4–like phase which is similar reduction patterns of CoO2 phase resulting from delithiation of LCO structure. The 2nd reduction peak at 300~375 °C corresponds to the reduction of Co3O4–like phase to CoO–like phase. TPR results indicate the thermal instability of delithiated LCO driven by CoO2–like phase on the surface of the delithiated LCO. In the TPR kinetics, the activation energies (Ea) obtained for as-synthesized LCO were 105.6 and 82.7 kJ mol-1 for Tm_H1 and Tm_H2, respectively, whereas Ea for the delithiated LCO were 93.2, 124.1 and 216.3 kJ mol-1 for Tm_L1, Tm_L2 and Tm_L3, respectively. As a result, the TPR method enables to identify the structural changes and thermal stability of each phase and effectively characterize the distinctive thermal behavior between as-synthesized and delithiated LCO.

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Effect of Natural Fe2O3 Doping on Performance of Lithium Phospate Ceramic Glass as Secondary Battery Cathode

Molekul ◽

10.20884/1.jm.2017.12.2.252 ◽

2017 ◽

Vol 12 (2) ◽

pp. 109 ◽

Cited By ~ 2

Author(s):

Mukhtar Effendi ◽

Dina Rahmawati ◽

Wahyu Tri Cahyanto ◽

Wahyu Widanarto

Keyword(s):

Thermal Stability ◽

Ionic Conductivity ◽

Glass Temperature ◽

Crystal Temperature ◽

Xrd Pattern ◽

Secondary Battery ◽

Ceramic Glass ◽

Lcr Meter ◽

Thermal Stability Of

Natural Fe2O3 doped lithium phosphate Ceramic-glass was made by glass route method at 900 oC with the composition of 5Li2CO3:15ZnO : x Fe2O3: (80 – x) P2O5 where x = 0; 0.5; 1.5 (in mol percent). Thermal stability of sample was studied through determination of glass temperature Tg and crystal temperature Tc. XRD pattern and LCR meter measurement were carried out to determine phase, structure and ionic conductivity of the ceramic-glass samples. LiFePO4 was formed at 1.5% addition of Fe2O3. Ionic conductivity rise up by the increasing Fe2O3 concentration. The highest electric conductivity is 8,42 x 10-4 S/cm which was obtained at 1.5% addition of Fe2O3

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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