scholarly journals EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS

2001 ◽  
Vol 50 (9) ◽  
pp. 1774
Author(s):  
ZHOU YU-GANG ◽  
SHEN BO ◽  
LIU JIE ◽  
ZHOU HUI-MEI ◽  
YU HUI-QIANG ◽  
...  
2001 ◽  
Vol 693 ◽  
Author(s):  
Y.G. Zhou ◽  
B. Shen ◽  
H.Q. Yu ◽  
J. Liu ◽  
H.M. Zhou ◽  
...  

AbstractA method based on Schottky capacitance-voltage (C-V) simulation was developed to extract the polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructures. There are two characteristic slopes in the experimental and simulated C-V curves.The influences of the polarization-induced charge density, n-AlGaN doping level and the Schottky barrier height on the positions of the two slopes in the C-V curves are much different from each other. The polarization-induced charge density can be extracted accurately by fitting the experimental C-V curves. It is extracted to be 6.78 x 1012cm-2in modulation-doped Al0.22Ga0.78N/GaN heterostructures with the Al0.22Ga0.78N thickness of 30 nm or 45 nm. The charge density reducesto 1.30 x 1012cm-2in the heterostructure with the Al0.22Ga0.78N thickness of 75 nm. It is thought that the reduction of the polarization-induced charges at the heterointerface is due to the partial relaxation of the Al0.22Ga0.78N layer on GaN.


2018 ◽  
Vol 98 (20) ◽  
Author(s):  
Yongsheng Zhao ◽  
Wenge Yang ◽  
Harold S. Schnyders ◽  
Anke Husmann ◽  
Ganghua Zhang ◽  
...  

1993 ◽  
Vol 70 (6) ◽  
pp. 845-848 ◽  
Author(s):  
D. DiCarlo ◽  
E. Sweetland ◽  
M. Sutton ◽  
J. D. Brock ◽  
R. E. Thorne

2018 ◽  
Vol 5 (2) ◽  
pp. 10-15 ◽  
Author(s):  
Zh.A. Moldabekov ◽  
◽  
P. Ludwig ◽  
J.-P. Joost ◽  
M. Bonitz ◽  
...  

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