scholarly journals Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB24 ◽  
Author(s):  
Shigeyoshi Usami ◽  
Atsushi Tanaka ◽  
Hayata Fukushima ◽  
Yuto Ando ◽  
Manato Deki ◽  
...  
Keyword(s):  
Leakage Current ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Standing ◽  
Screw Dislocations ◽  
Organic Vapor ◽  
Homoepitaxial Growth ◽  
Reverse Leakage Current ◽  
Metal Organic

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

2013 ◽  
Vol 211 (1) ◽  
pp. 27-33 ◽  
Author(s):  
Guenter Wagner ◽  
Michele Baldini ◽  
Daniela Gogova ◽  
Martin Schmidbauer ◽  
Robert Schewski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Homoepitaxial Growth ◽  
Metal Organic

Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters

2014 ◽  
Vol 783-786 ◽  
pp. 1990-1995 ◽  
Author(s):  
Shinjiro Hara
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Standing ◽  
Bottom Up ◽  
Semiconductor Nanowire ◽  
Organic Vapor ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Inas Nanowires

The author introduces and summarizes the results on bottom-up formation and structural characterizations obtained so far for the MnAs nanoclusters and MnAs/semiconductor nanowire hybrids. First, MnAs nanoclusters were grown by selective-area metal-organic vapor phase epitaxy. They had a hexagonal NiAs-type crystal structure. Their <00(0)1> direction was parallel to <111>B direction of zinc-blende-type GaAs substrates. Hybrid MnAs/GaAs nanowires, subsequently, were fabricated by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowire templates and endotaxial MnAs nanoclustering on them. MnAs nanoclusters ordered at six ridges of hexagonal GaAs nanowires were formed possibly owing to more atomic steps between {0-11} crystal facets. In the case of hybrid MnA/InAs nanowires, MnAs nanoclusters were not formed only on the {0-11} side-walls, and/or ridges between them, but on the top {111}B crystal facets of hexagonal InAs nanowires. MnAs nanoclusters were formed much deeper into the InAs nanowires than into the GaAs nanowires. These facts are possibly due to the InAs nanowires are thermally less stable than the GaAs nanowires. Some of the hybrid MnA/InAs nanowires were bent at the parts where the MnAs nanoclusters were grown into the host nanowires mainly owing to the strain effects.

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (10) ◽  
pp. 101001 ◽  
Author(s):  
Kimihito Ooyama ◽  
Katsuya Sugawara ◽  
Shinya Okuzaki ◽  
Hiroyuki Taketomi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic

A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

2004 ◽  
Vol 267 (1-2) ◽  
pp. 140-144 ◽  
Author(s):  
A. Dadgar ◽  
N. Oleynik ◽  
D. Forster ◽  
S. Deiter ◽  
H. Witek ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Growth Method ◽  
Metal Organic

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cascade Lasers
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