scholarly journals Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

2020 ◽  
Vol 59 (SF) ◽  
pp. SFFA01
Author(s):  
Sho Aonuki ◽  
Yudai Yamashita ◽  
Kaoru Toko ◽  
Takashi Suemasu
1997 ◽  
Vol 12 (7) ◽  
pp. 917-920 ◽  
Author(s):  
T S Cheng ◽  
C T Foxon ◽  
G B Ren ◽  
J W Orton ◽  
Yu V Melnik ◽  
...  

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.


1997 ◽  
Vol 175-176 ◽  
pp. 1045-1050 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai

2012 ◽  
Vol 51 ◽  
pp. 068001 ◽  
Author(s):  
Keita Ito ◽  
Kazuki Kabara ◽  
Hirokazu Takahashi ◽  
Tatsunori Sanai ◽  
Kaoru Toko ◽  
...  

1997 ◽  
Vol 82 (6) ◽  
pp. 2938-2943 ◽  
Author(s):  
S. Tomiya ◽  
R. Minatoya ◽  
H. Tsukamoto ◽  
S. Itoh ◽  
K. Nakano ◽  
...  

2002 ◽  
Vol 406 (1-2) ◽  
pp. 224-227
Author(s):  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Hajime Haneda ◽  
Koichiro Takahashi

2009 ◽  
Vol 311 (7) ◽  
pp. 2054-2057 ◽  
Author(s):  
J.L. Hall ◽  
M.A. Moram ◽  
A. Sanchez ◽  
S.V. Novikov ◽  
A.J. Kent ◽  
...  

2013 ◽  
Vol 114 (9) ◽  
pp. 093704 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Ken Watanabe ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Shunichi Hishita ◽  
...  

1997 ◽  
Vol 12 (7) ◽  
pp. 1844-1849 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
Y. Liang ◽  
G. C. Dunham ◽  
S. A. Chambers

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).


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