Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

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Epitaxial Ferromagnetic MnGa and (MnNi) Ga Thin Films with Perpendicular Magnetization on GaAs

MRS Proceedings ◽

10.1557/proc-313-507 ◽

1993 ◽

Vol 313 ◽

Cited By ~ 5

Author(s):

M. Tanaka ◽

J.P. Harbison ◽

T.D. Sands ◽

B.A. Philips ◽

J. De Boeck ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Perpendicular Magnetization ◽

Gaas Substrates ◽

Extraordinary Hall Effect ◽

Hall Effect Measurements ◽

Perpendicular Component ◽

Ni Additions ◽

Hysteresis Characteristics

ABSTRACTWe have successfully grown thermodynamically stable ferromagnetic MnxGa1-x (x=0.55∼0.60) thin films with thicknesses ranging from 3 nm to 60 nm on GaAs substrates by molecular beam epitaxy. The c-axis of the tetragonal structure of the MnGa film is shown to be aligned perpendicular to the substrate. Both Magnetization Measurements and extraordinary Hall effect measurements indicate perpendicular magnetization of the MnGa films, exhibiting squarelike hysteresis characteristics. Furthermore, we have investigated the effect of Ni additions as a substitution for mn in (Mn60-yNiy) Ga40 alloy thin films with y=0 – 30 at% Ni. With increasing Ni, the perpendicular component of the magnetization becomes smaller up to y=18 where the magnetization is in-plane. At y=30, the magnetization is again perpendicular.

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Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-485-169 ◽

1997 ◽

Vol 485 ◽

Author(s):

B. H. Tseng ◽

S. B. Lin ◽

D. J. Yang

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Molecular Beam ◽

Epitaxial Films ◽

Luminescence Properties ◽

High Quality ◽

Film Composition ◽

Exciton Emission ◽

Gaas Substrates

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

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Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Opto-Electronics Review ◽

10.2478/s11772-012-0048-4 ◽

2012 ◽

Vol 20 (4) ◽

Cited By ~ 3

Author(s):

I. Izhnin ◽

A. Izhnin ◽

H. Savytskyy ◽

O. Fitsych ◽

N. Mikhailov ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Buffer Layers ◽

Structural Defects ◽

Donor Concentration ◽

Ion Milling ◽

Electrical And Optical Properties ◽

Gaas Substrates ◽

Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

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