Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing
Keyword(s):
2004 ◽
Vol 13
(4)
◽
pp. 669-675
◽
Keyword(s):
1997 ◽
Vol 36
(Part 2, No. 6B)
◽
pp. L805-L807
◽
Keyword(s):
Keyword(s):
Keyword(s):
2001 ◽
Vol 328
(1-2)
◽
pp. 242-247
◽
Keyword(s):
1982 ◽
Vol 41
(4)
◽
pp. 321-324
◽