scholarly journals In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7576
Author(s):  
Michal Novotný ◽  
Jan Remsa ◽  
Šárka Havlová ◽  
Joris More-Chevalier ◽  
Stefan Andrei Irimiciuc ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Oxide Thin Films ◽  
Force Microscopy ◽  
Pulsed Laser Annealing ◽  
Doped Oxide

Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.

scholarly journals Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions

2016 ◽  
Vol 28 (17) ◽  
pp. 6136-6145 ◽  
Author(s):  
Albert Queraltó ◽  
Angel Pérez del Pino ◽  
María de la Mata ◽  
Jordi Arbiol ◽  
Mar Tristany ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Pulsed Laser Annealing ◽  
Chemical Solutions

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Optical properties of amorphous indium zinc oxide thin films synthesized by pulsed laser deposition

2014 ◽  
Vol 306 ◽  
pp. 52-55 ◽  
Author(s):  
V. Craciun ◽  
C. Martin ◽  
G. Socol ◽  
D. Tanner ◽  
H.C. Swart ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide

Raman and Optical Properties of the Pulsed Laser Annealing Phase of SI

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Compaan ◽  
A. Aydinli ◽  
M. C. Lee ◽  
H. W. LO
Keyword(s):  
Optical Properties ◽  
Laser Pulse ◽  
Absorption Coefficient ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Experimental Tests ◽  
Small Temperature ◽  
Pulsed Laser Annealing ◽  
Near Ir ◽  
Transmission Measurements

ABSTRACTRaman measurements of temperature reported earlier have been repeated using a doubled Nd: YAG pulse for excitation and an electronically delayed dye laser pulse. These results, together with a variety of experimental tests of the Raman method, confirm the validity of the small temperature rise during pulsed laser annealing. Transmission measurements spanning the visible and near IR show that there exists a thin (∼ 70 nm) layer at the surface in which the induced absorption coefficient is ∼ 7 × 105 cm−1.

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