Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2mixture gas

2017 ◽  
Vol 10 (6) ◽  
pp. 061004 ◽  
Author(s):  
Yadan Zhu ◽  
Taiping Lu ◽  
Xiaorun Zhou ◽  
Guangzhou Zhao ◽  
Hailiang Dong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Efficiency Improvement ◽  
Cap Layer ◽  
Photoluminescence Efficiency

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum wells

2017 ◽  
Author(s):  
M. Biswas ◽  
A. Balgarkashi ◽  
S. Singh ◽  
N. Shinde ◽  
R. L. Makkar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence

1 Tbit/s demultiplexing using low temperature grown InGaAs/InAlAs multiple quantum wells

1998 ◽  
Vol 34 (9) ◽  
pp. 908 ◽  
Author(s):  
H. Kobayashi ◽  
R. Takahashi ◽  
Y. Matsuoka ◽  
H. Iwamura
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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