InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

2018 ◽  
Vol 11 (9) ◽  
pp. 094101 ◽  
Author(s):  
Yachao Zhang ◽  
Tao Zhang ◽  
Hong Zhou ◽  
Yao Li ◽  
Shengrui Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Performance

High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor

2000 ◽  
Vol 39 (Part 2, No. 10B) ◽  
pp. L1029-L1031 ◽  
Author(s):  
Ching-Sung Lee ◽  
Wei-Chou Hsu ◽  
Yen-Wei Chen ◽  
Yung-Cha Chen ◽  
Hir-Ming Shieh
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

2021 ◽  
Author(s):  
Paula Palacios ◽  
Muh‐Dey Wei ◽  
Thorsten Zweipfennig ◽  
Ahmed Hamed ◽  
Carsten Beckmann ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Oscillator

scholarly journals Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure

2008 ◽  
Vol 8 (2) ◽  
pp. 640-644 ◽  
Author(s):  
S. Çörekçi ◽  
D. Usanmaz ◽  
Z. Tekeli ◽  
M. Çakmak ◽  
S. Özçelik ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Step Flow ◽  
Density Of Dislocations ◽  
Aln Buffer

We present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 108–109 cm−2. The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100–250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AlN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

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