High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design
2020 ◽
Vol 829
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pp. 154542
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2001 ◽
Vol 48
(7)
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pp. 1290-1296
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2004 ◽
Vol 22
(3)
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pp. 1565
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2019 ◽
Vol 14
(8)
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pp. 1133-1142
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2007 ◽
Vol 25
(4)
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pp. 1284
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2007 ◽
Vol 46
(6A)
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pp. 3385-3387
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Keyword(s):
2014 ◽
Vol 11
(3-4)
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pp. 844-847
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