Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography

AbstractAtom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.

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Characterization of Nanoscale Precipitates in 10Ni3MnCuAl Steel by Three Dimensional Atom Probe Tomography

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.634-638.2135 ◽

2013 ◽

Vol 634-638 ◽

pp. 2135-2139

Author(s):

Yi Luo

Keyword(s):

Heat Treatment ◽

Atom Probe Tomography ◽

Concentration Ratio ◽

Solution Heat Treatment ◽

Three Dimensional ◽

Atom Probe ◽

Hardened Steel ◽

Concentration Peak ◽

Hardness Increase

The precipitation hardened steel 10Ni3MnCuAl after solution heat treatment and aging at 510 °C is investigated by three dimensional atom probe (3DAP). The results show that the Ni, Mn, Al and Cu distribute uniformly in the steel after solution heat treatment, but they form multicomponent precipitates after aging and cause the hardness increase. The concentration ratio between Ni and Al in multicomponent precipitates is roughly 1, while the concentration of Fe decreases, and the distance between concentration peak of Cu and those of Ni and Al becomes wider with the aging time, which is related to the precipitation character of Cu in α-ferrite.

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Chemical and Structural Characterization of γ/γ′ Interfaces

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.463-464.20 ◽

2012 ◽

Vol 463-464 ◽

pp. 20-24

Author(s):

Kai Zhao

Keyword(s):

Atom Probe Tomography ◽

Three Dimensional ◽

Atom Probe ◽

Scanning Transmission Electron Microscope ◽

Atomic Scale ◽

X Ray ◽

Transmission Electron ◽

Scanning Transmission ◽

Nickel Base

More attention has been paid to the interfaces since mechanical properties of nickel-base superalloys are determined to some degree by them. The compositional transition across γ/γ′ interfaces and atomic structure of the interfaces was investigated using three-dimensional atom probe tomography and scanning transmission electron microscope equipped with high-resolution Energy Dispersive X-ray Spectrometry. Results show that no obvious segregation to the interfaces or ledges of the precipitates in the present experimental alloys has been observed. Also, adsorption of a solute to the interface was not observed. The interfaces are not flat as usually thought at an atomic scale. The interfacial thickness is about two atomic layers, i.e. 0.7 nm.

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