Sensitive Site-Specific Dopant Mapping in Scanning Electron Microscopy on Specimens Prepared by Low Energy Ar+Ion Milling

2013 ◽  
Vol 6 (12) ◽  
pp. 126601 ◽  
Author(s):  
Daisuke Tsurumi ◽  
Kotaro Hamada
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Energy ◽  
Ion Milling ◽  
Site Specific ◽  
Sensitive Site ◽  
Scanning Electron

A New Methodology to Analyze Instabilities in SEM Imaging

2014 ◽  
Vol 20 (6) ◽  
pp. 1625-1637 ◽  
Author(s):  
Catalina Mansilla ◽  
Václav Ocelík ◽  
Jeff T. M. De Hosson
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Digital Image Correlation ◽  
Field Emission ◽  
Digital Image ◽  
Image Correlation ◽  
Ion Milling ◽  
Sem Imaging ◽  
Successive Generations ◽  
Scanning Electron

AbstractThis paper presents a statistical method to analyze instabilities that can be introduced during imaging in scanning electron microscopy (SEM). The method is based on the correlation of digital images and it can be used at different length scales. It consists of the evaluation of three different approaches with four parameters in total. The methodology is exemplified with a specific case of internal stress measurements where ion milling and SEM imaging are combined with digital image correlation. It is concluded that before these measurements it is important to test the SEM column to ensure the minimization and randomization of the imaging instabilities. The method has been applied onto three different field emission gun SEMs (Philips XL30, Tescan Lyra, FEI Helios 650) that represent three successive generations of SEMs. Important to note that the imaging instability can be quantified and its source can be identified.

scholarly journals Low and Ultra-low Energy Scanning Electron Microscopy of 2D Transition Metal Dichalcogenides: Experiments and Simulations

2018 ◽  
Vol 24 (S1) ◽  
pp. 1564-1565
Author(s):  
Eliska Mikmekovâ ◽  
Ales Patâk ◽  
Ilona Mullerovâ ◽  
Ludëk Frank ◽  
Benjamin Daniel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Low Energy ◽  
Metal Dichalcogenides ◽  
Scanning Electron

scholarly journals Ultra-Low Voltage Scanning Electron Microscopy

1996 ◽  
Vol 4 (7) ◽  
pp. 12-13
Author(s):  
David C. Joy ◽  
Carolyn S. Joy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
State Of The Art ◽  
Energy State ◽  
Low Energy ◽  
High Brightness ◽  
Brightness Field ◽  
Voltage Scanning ◽  
Scanning Electron

Although the benefits of operating the scanning electron microscope at low beam energies have been evident since the earliest days of the instrument, the successful utilization of the SEM under these conditions has required the development of high brightness field emission electron source, advanced lenses, and clean vacuums. As these technologies became available the level at which imaging became regarded as “low energy” has fallen from 10 keV, first to 5 keV, and more recently to 1 keV. At this energy state of the art, instruments can now provide an excellent balance between resolution - which becomes worse with decreasing energy - and desirable goals such as the minimization of sample charging and the reduction of macroscopic radiation damage - which tend to become more challenging as the energy is increased.

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