Over 3000 cm2V−1s−1room temperature two-dimensional electron gas mobility by annealing Ni/Al deposited on AlGaN/GaN heterostructures
2013 ◽
Vol 52
◽
pp. 150-154
1992 ◽
Vol 31
(Part 1, No. 7)
◽
pp. 2075-2078
2016 ◽
Vol 441
◽
pp. 71-77
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1998 ◽
Vol 16
(3)
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pp. 1634
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