Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16 nm Complementary Metal–Oxide–Semiconductor Devices and Digital Circuits
2011 ◽
Vol 50
(4S)
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pp. 04DC22
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2011 ◽
Vol 50
(4)
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pp. 04DC22
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2009 ◽
Vol 27
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pp. 1261
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Vol 32
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pp. 076001
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2000 ◽
Vol 39
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pp. 6843-6848
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Vol 26
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pp. 1440
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