Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Oxide Semiconductor ◽

Effective Work ◽

Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devices

Surface and Interface Analysis ◽

10.1002/sia.4969 ◽

2012 ◽

Vol 44 (11-12) ◽

pp. 1436-1439

Author(s):

S. V. Jagadeesh Chandra ◽

Woong-Ki Hong ◽

Jin-Sung Kim ◽

Hyobong Hong ◽

Chel-Jong Choi

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effective Work ◽

Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2011.10.137 ◽

2012 ◽

Vol 520 (14) ◽

pp. 4556-4558 ◽

Cited By ~ 8

Author(s):

S. V. Jagadeesh Chandra ◽

E. Fortunato ◽

R. Martins ◽

Chel-Jong Choi

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effective Work ◽

Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.2833697 ◽

2008 ◽

Vol 92 (2) ◽

pp. 023503 ◽

Cited By ~ 10

Author(s):

F. Fillot ◽

S. Maîtrejean ◽

I. Matko ◽

B. Chenevier

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Work Function ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effective Work ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

10.1116/1.3521471 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A905 ◽

Cited By ~ 1

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Work Function ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

P Type

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ/SiO2 dielectric

10.1116/1.5120268 ◽

2019 ◽

Vol 37 (6) ◽

pp. 062204

Author(s):

Piyas Samanta

Keyword(s):

Metal Oxide ◽

Work Function ◽

Oxide Semiconductor ◽

Interface Trap ◽

Effective Work ◽

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

10.1116/1.3021043 ◽

2009 ◽

Vol 27 (1) ◽

pp. 290 ◽

Cited By ~ 4

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Work Function ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Lanthanide Ion ◽

Effective Work ◽

Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

Applied Physics Letters ◽

10.1063/1.3303976 ◽

2010 ◽

Vol 96 (5) ◽

pp. 053506 ◽

Cited By ~ 6

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Work Function ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function ◽

Lanthanide Doping ◽

Work Function Tuning

The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-kDielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.011802 ◽

2012 ◽

Vol 51 (1R) ◽

pp. 011802

Author(s):

Bongmook Lee ◽

Steven R. Novak ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Rare Earth ◽

Metal Oxide ◽

Semiconductor Device ◽

Rare Earth Metals ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function ◽

Device Applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity