Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2953732 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1440 ◽

Author(s):

V. Bliznetsov ◽

N. Singh ◽

R. Kumar ◽

N. Balasubramanian ◽

P. Guo ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

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Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4913832 ◽

2015 ◽

Vol 117 (11) ◽

pp. 112806 ◽

Author(s):

J. Robertson ◽

Y. Guo ◽

L. Lin

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Defect State ◽

Oxide Interfaces ◽

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Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4816090 ◽

2013 ◽

Vol 114 (3) ◽

pp. 034505 ◽

Author(s):

R. K. Pandey ◽

Rajesh Sathiyanarayanan ◽

Unoh Kwon ◽

Vijay Narayanan ◽

K. V. R. M. Murali

Keyword(s):

Metal Oxide ◽

Work Function ◽

Point Defects ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function

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Control of Schottky Barrier Heights on High-KGate Dielectrics for Future Complementary Metal-Oxide Semiconductor Devices

Physical Review Letters ◽

10.1103/physrevlett.99.086805 ◽

2007 ◽

Vol 99 (8) ◽

Author(s):

Koon-Yiu Tse ◽

John Robertson

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Barrier Heights

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Evaluation and Resolution for Nonideal Characteristics of Complementary Metal–Oxide–Semiconductor Devices Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.4408 ◽

2008 ◽

Vol 47 (6) ◽

pp. 4408-4412

Author(s):

Seongjae Cho ◽

Il Han Park ◽

Jung Hoon Lee ◽

Jong Duk Lee ◽

Byung-Gook Park

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Effects of Low-kStack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.096504 ◽

2012 ◽

Vol 51 (9R) ◽

pp. 096504

Author(s):

Masayoshi Tagami ◽

Naoya Inoue ◽

Makoto Ueki ◽

Mitsuru Narihiro ◽

Munehiro Tada ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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