Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AG01 ◽  
Author(s):  
Hunsoo Jeon ◽  
Gang Seok Lee ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jeong Shin ◽  
...  
2012 ◽  
Vol 51 (1) ◽  
pp. 01AG01
Author(s):  
Hunsoo Jeon ◽  
Gang Seok Lee ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jeong Shin ◽  
...  

2012 ◽  
Vol 5 (12) ◽  
pp. 122101 ◽  
Author(s):  
Toru Kinoshita ◽  
Keiichiro Hironaka ◽  
Toshiyuki Obata ◽  
Toru Nagashima ◽  
Rafael Dalmau ◽  
...  

2017 ◽  
Vol 3 (1) ◽  
pp. 32-39
Author(s):  
A.Y. Polyakov ◽  
Jin-Hyeon Yun ◽  
A.S. Usikov ◽  
E.B. Yakimov ◽  
N.B. Smirnov ◽  
...  

Author(s):  
A. Y. Polyakov ◽  
Jin-Hyeon Yun ◽  
A. S. Usikov ◽  
E. B. Yakimov ◽  
N. B. Smirnov ◽  
...  

Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates) of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.


2020 ◽  
Vol 70 (4) ◽  
pp. 315-321
Author(s):  
Kyoung Hwa KIM ◽  
Gang Seok LEE ◽  
Hyung Soo AHN* ◽  
Injun JEON ◽  
Chae Ryong CHO ◽  
...  

2018 ◽  
Vol 68 (7) ◽  
pp. 742-748
Author(s):  
Kyoung Hwa KIM ◽  
Hyung Soo AHN* ◽  
Min YANG ◽  
Sam Nyung YI ◽  
Hunsoo JEON ◽  
...  

2004 ◽  
Vol 95 (12) ◽  
pp. 8247-8251 ◽  
Author(s):  
G. A. Smith ◽  
T. N. Dang ◽  
T. R. Nelson ◽  
J. L. Brown ◽  
D. Tsvetkov ◽  
...  

2017 ◽  
Vol 215 (10) ◽  
pp. 1700491 ◽  
Author(s):  
Injun Jeon ◽  
Sung Geun Bae ◽  
Hunsoo Jeon ◽  
Kyoung Hwa Kim ◽  
Min Yang ◽  
...  

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