scholarly journals Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

2016 ◽  
Vol 19 (2) ◽  
pp. 75-86
Author(s):  
A. Y. Polyakov ◽  
Jin-Hyeon Yun ◽  
A. S. Usikov ◽  
E. B. Yakimov ◽  
N. B. Smirnov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Luminescent Properties ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Light Emitting ◽  
The Difference

Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates) of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

Color Tunability of Blue Phosphors by Changing Cations for Near-UV InGaN-Based Light-Emitting Diode

2014 ◽  
Vol 986-987 ◽  
pp. 156-159
Author(s):  
Yi Wen Zhu ◽  
Fen Fen Hu ◽  
Mei Li Zhou ◽  
Ping Chen ◽  
Zheng Liang Wang
Keyword(s):  
Uv Light ◽  
Light Emitting Diode ◽  
Blue Emission ◽  
Emission Spectra ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Ionic Radii ◽  
Light Emitting ◽  
Triclinic Structure ◽  
The Difference

The serials of blue phosphors, CaAl2Si2O8: Eu2+ doped with different content Sr2+ and Mg2+ ions, were prepared by solid-state reaction at high temperature. And their structure and photo-luminescent properties were investigated. In Ca0.96-ySryAl2Si2O8: 0.04Eu2+ (y = 0.10, 0.30, 0.50, 0.70, 0.90) system, for y ≦ 0.03, all the compositions crystallize in triclinic structure of CaAl2Si2O8, and on further increase of y, the system undergoes a compositionally induced phase transition from triclinic to monoclinic structure. For Ca0.96-yMgyAl2Si2O8: 0.04Eu2+ (y = 0.10, 0.30, 0.50, 0.70, 0.90) system, for z ≦ 0.03, all the compositions are of triclinic structure of CaAl2Si2O8. With the further increase of z, other phase appears. The emission spectra of these phosphors show blue shift with the introduction of Sr2+ ions, and red shift with Mg2+ ions. The reason may be due to the difference ionic radii of Mg2+, Ca2+, Sr2+. These phosphors show excellent blue emission and broad excitation band in near-UV (ultraviolet) range. They may be potential phosphors for near-UV light-emitting diodes (LEDs).

Characterization of Epilayers in Vertical Light-Emitting Diode Grown by Mixed-Source Hydride Vapor Phase Epitaxy

2020 ◽  
Vol 70 (4) ◽  
pp. 315-321
Author(s):  
Kyoung Hwa KIM ◽  
Gang Seok LEE ◽  
Hyung Soo AHN* ◽  
Injun JEON ◽  
Chae Ryong CHO ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Vertical-Type Phosphor-Free White-Light-Emitting Diode Fabricated by Using a Mixed-Source Hydride Vapor-Phase Epitaxy Method

2018 ◽  
Vol 68 (7) ◽  
pp. 742-748
Author(s):  
Kyoung Hwa KIM ◽  
Hyung Soo AHN* ◽  
Min YANG ◽  
Sam Nyung YI ◽  
Hunsoo JEON ◽  
...  
Keyword(s):  
Vapor Phase ◽  
White Light ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AG01
Author(s):  
Hunsoo Jeon ◽  
Gang Seok Lee ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jeong Shin ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Light Emitting

Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AG01 ◽  
Author(s):  
Hunsoo Jeon ◽  
Gang Seok Lee ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jeong Shin ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Light Emitting

Vertical-Type Blue Light Emitting Diode by Mixed-Source Hydride Vapor Phase Epitaxy Method

2017 ◽  
Vol 215 (10) ◽  
pp. 1700491 ◽  
Author(s):  
Injun Jeon ◽  
Sung Geun Bae ◽  
Hunsoo Jeon ◽  
Kyoung Hwa Kim ◽  
Min Yang ◽  
...  
Keyword(s):  
Blue Light ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Development of a Blue Light-Emitting Diode by Using a Mixed-Source Hydride-Vapor-Phase Epitaxy Method

2017 ◽  
Vol 67 (4) ◽  
pp. 444-450
Author(s):  
Hunsoo JEON ◽  
Injun JEON ◽  
Sung Geun BAE ◽  
Sam Nyung YI ◽  
Min YANG ◽  
...  
Keyword(s):  
Blue Light ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles' Matrix Method

1986 ◽  
Vol 90 ◽  
Author(s):  
A. T. Macrander ◽  
B. M. Glasgow ◽  
E. R. Minami ◽  
R. F. Karlicek ◽  
D. L. Mitcham ◽  
...  
Keyword(s):  
Active Layer ◽  
Vapor Phase ◽  
Matrix Method ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray

ABSTRACTSimulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.

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