Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy

2016 ◽  
Vol 56 (1S) ◽  
pp. 01AD03 ◽  
Author(s):  
Gang Seok Lee ◽  
Hunsoo Jeon ◽  
Hyung Soo Ahn ◽  
Min Yang ◽  
Sam Nyung Yi ◽  
...  
Author(s):  
A. Y. Polyakov ◽  
Jin-Hyeon Yun ◽  
A. S. Usikov ◽  
E. B. Yakimov ◽  
N. B. Smirnov ◽  
...  

Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates) of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.


2020 ◽  
Vol 70 (4) ◽  
pp. 315-321
Author(s):  
Kyoung Hwa KIM ◽  
Gang Seok LEE ◽  
Hyung Soo AHN* ◽  
Injun JEON ◽  
Chae Ryong CHO ◽  
...  

2018 ◽  
Vol 68 (7) ◽  
pp. 742-748
Author(s):  
Kyoung Hwa KIM ◽  
Hyung Soo AHN* ◽  
Min YANG ◽  
Sam Nyung YI ◽  
Hunsoo JEON ◽  
...  

2012 ◽  
Vol 51 (1) ◽  
pp. 01AG01
Author(s):  
Hunsoo Jeon ◽  
Gang Seok Lee ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jeong Shin ◽  
...  

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AG01 ◽  
Author(s):  
Hunsoo Jeon ◽  
Gang Seok Lee ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jeong Shin ◽  
...  

2017 ◽  
Vol 215 (10) ◽  
pp. 1700491 ◽  
Author(s):  
Injun Jeon ◽  
Sung Geun Bae ◽  
Hunsoo Jeon ◽  
Kyoung Hwa Kim ◽  
Min Yang ◽  
...  

2017 ◽  
Vol 67 (4) ◽  
pp. 444-450
Author(s):  
Hunsoo JEON ◽  
Injun JEON ◽  
Sung Geun BAE ◽  
Sam Nyung YI ◽  
Min YANG ◽  
...  

1986 ◽  
Vol 90 ◽  
Author(s):  
A. T. Macrander ◽  
B. M. Glasgow ◽  
E. R. Minami ◽  
R. F. Karlicek ◽  
D. L. Mitcham ◽  
...  

ABSTRACTSimulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.


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