Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory

2012 ◽  
Vol 51 (7R) ◽  
pp. 074301 ◽  
Author(s):  
Wandong Kim ◽  
Yoon Kim ◽  
Se Hwan Park ◽  
Joo Yun Seo ◽  
Do Bin Kim ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Gate Length ◽  
Nand Flash ◽  
Virtual Source ◽  
Nand Flash Memory ◽  
Cell Current

Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory

2012 ◽  
Vol 51 ◽  
pp. 074301 ◽  
Author(s):  
Wandong Kim ◽  
Yoon Kim ◽  
Se Hwan Park ◽  
Joo Yun Seo ◽  
Do Bin Kim ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Gate Length ◽  
Nand Flash ◽  
Virtual Source ◽  
Nand Flash Memory ◽  
Cell Current

Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DD08
Author(s):  
Wandong Kim ◽  
Dae Woong Kwon ◽  
Jung Hwan Ji ◽  
Jung Hoon Lee ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Adjacent Cell ◽  
Nand Flash ◽  
Virtual Source ◽  
Nand Flash Memory

Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

2011 ◽  
Vol 50 (4) ◽  
pp. 04DD08 ◽  
Author(s):  
Wandong Kim ◽  
Dae Woong Kwon ◽  
Jung Hwan Ji ◽  
Jung Hoon Lee ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Adjacent Cell ◽  
Nand Flash ◽  
Virtual Source ◽  
Nand Flash Memory

Optimized Contact Engineering to Maximize Cell Current in NAND Flash Memory Technology

2013 ◽  
Vol 58 (5) ◽  
pp. 103-108
Author(s):  
J. H. Yoon ◽  
H.-S. Kim ◽  
Y. S. Kim ◽  
J. K. Lee ◽  
E. S. Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Cell Current ◽  
Contact Engineering

scholarly journals Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

2020 ◽  
Vol 8 ◽  
pp. 140-144 ◽  
Author(s):  
Tao Yang ◽  
Zhiliang Xia ◽  
Dandan Shi ◽  
Yingjie Ouyang ◽  
Zongliang Huo
Keyword(s):  
Grain Size ◽  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory
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