Effects of Transition Metal Dichalcogenide Molybdenum Disulfide Layer Formation in Copper–Zinc–Tin–Sulfur Solar Cells from Numerical Analysis

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NC32 ◽  
Author(s):  
Puvaneswaran Chelvanathan ◽  
Mohammad Istiaque Hossain ◽  
Jamilah Husna ◽  
Mohammad Alghoul ◽  
Kamaruzzaman Sopian ◽  
...  
Keyword(s):  
Solar Cells ◽  
Numerical Analysis ◽  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Transition Metal Dichalcogenide ◽  
Layer Formation ◽  
Copper Zinc

Effects of Transition Metal Dichalcogenide Molybdenum Disulfide Layer Formation in Copper–Zinc–Tin–Sulfur Solar Cells from Numerical Analysis

2012 ◽  
Vol 51 ◽  
pp. 10NC32 ◽  
Author(s):  
Puvaneswaran Chelvanathan ◽  
Mohammad Istiaque Hossain ◽  
Jamilah Husna ◽  
Mohammad Alghoul ◽  
Kamaruzzaman Sopian ◽  
...  
Keyword(s):  
Solar Cells ◽  
Numerical Analysis ◽  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Transition Metal Dichalcogenide ◽  
Layer Formation ◽  
Copper Zinc

Numerical analysis of the effect of MoS2 interface layers on copper-zinc-tin-sulfur thin film solar cells

Optik ◽  
2020 ◽  
Vol 201 ◽  
pp. 163496 ◽  
Author(s):  
Junhui Lin ◽  
Jiaxiong Xu ◽  
Yuanzheng Yang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Numerical Analysis ◽  
Thin Film Solar Cells ◽  
Copper Zinc ◽  
Interface Layers

scholarly journals High-specific-power flexible transition metal dichalcogenide solar cells

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Koosha Nassiri Nazif ◽  
Alwin Daus ◽  
Jiho Hong ◽  
Nayeun Lee ◽  
Sam Vaziri ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Fermi Level ◽  
Transition Metal Dichalcogenides ◽  
Specific Power ◽  
Transition Metal Dichalcogenide ◽  
Fermi Level Pinning ◽  
High Specific Power ◽  
Metal Dichalcogenides ◽  
Transfer Method

AbstractSemiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

scholarly journals High open-circuit voltage in transition metal dichalcogenide solar cells

Nano Energy ◽  
2021 ◽  
Vol 79 ◽  
pp. 105427
Author(s):  
Simon A. Svatek ◽  
Carlos Bueno-Blanco ◽  
Der-Yuh Lin ◽  
James Kerfoot ◽  
Carlos Macías ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Transition Metal Dichalcogenide

Modification of thermal transport in few-layer MoS2 by atomic-level defects engineering

Nanoscale ◽  
2021 ◽  
Author(s):  
Yunshan Zhao ◽  
Minrui Zheng ◽  
Jing Wu ◽  
Xin Guan ◽  
Ady Suwardi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Charge Carrier ◽  
Molybdenum Disulfide ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Atomic Level ◽  
Transition Metal Dichalcogenide ◽  
Significant Attention

Molybdenum disulfide (MoS2), as a representative transition metal dichalcogenide (TMDC), has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent...

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