scholarly journals High-specific-power flexible transition metal dichalcogenide solar cells

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Koosha Nassiri Nazif ◽  
Alwin Daus ◽  
Jiho Hong ◽  
Nayeun Lee ◽  
Sam Vaziri ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Fermi Level ◽  
Transition Metal Dichalcogenides ◽  
Specific Power ◽  
Transition Metal Dichalcogenide ◽  
Fermi Level Pinning ◽  
High Specific Power ◽  
Metal Dichalcogenides ◽  
Transfer Method

AbstractSemiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

scholarly journals Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

2019 ◽  
Vol 123 (9) ◽  
pp. 5411-5420 ◽  
Author(s):  
Kai Sotthewes ◽  
Rik van Bremen ◽  
Edwin Dollekamp ◽  
Tim Boulogne ◽  
Krystian Nowakowski ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Transition Metal Dichalcogenides ◽  
Fermi Level Pinning ◽  
Metal Dichalcogenides

scholarly journals Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos
Keyword(s):  
Dielectric Constant ◽  
Transition Metal ◽  
Harmonic Generation ◽  
Nonlinear Effect ◽  
Second Harmonic ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Metal Dichalcogenides ◽  
Epsilon Near Zero

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.

Size-dependent phase stability in transition metal dichalcogenide nanoparticles controlled by metal substrates

Nanoscale ◽  
2021 ◽  
Author(s):  
Albert Bruix ◽  
Jeppe Vang Lauritsen ◽  
Bjork Hammer
Keyword(s):  
Transition Metal ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Phase Stability ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Metal Substrates ◽  
Size Dependent ◽  
Metal Dichalcogenides

Nanomaterials based on MoS2 and related transition metal dichalcogenides are remarkably versatile; MoS2 nanoparticles are proven catalysts for processes such as hydrodesulphurization and the hydrogen evolution reaction, and transition metal...

scholarly journals Interface Engineering for Perovskite Solar Cells Based on 2D-Materials: A Physics Point of View

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5843
Author(s):  
Rosaria Verduci ◽  
Antonio Agresti ◽  
Valentino Romano ◽  
Giovanna D’Angelo
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
2D Materials ◽  
Low Cost ◽  
Transition Metal Dichalcogenides ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Point Of View ◽  
Physical Mechanisms ◽  
Metal Dichalcogenides

The last decade has witnessed the advance of metal halide perovskites as a promising low-cost and efficient class of light harvesters used in solar cells (SCs). Remarkably, the efficiency of lab-scale perovskite solar cells (PSCs) reached a power conversion efficiency of 25.5% in just ~10 years of research, rivalling the current record of 26.1% for Si-based PVs. To further boost the performances of PSCs, the use of 2D materials (such as graphene, transition metal dichalcogenides and transition metal carbides, nitrides and carbonitrides) has been proposed, thanks to their remarkable optoelectronic properties (that can be tuned with proper chemical composition engineering) and chemical stability. In particular, 2D materials have been demonstrated as promising candidates for (i) accelerating hot carrier transfer across the interfaces between the perovskite and the charge extraction layers; (ii) improving the crystallization of the perovskite layers (when used as additives in the precursor solution); (iii) favoring electronic bands alignment through tuning of the work function. In this mini-review, we discuss the physical mechanisms underlying the increased efficiency of 2D material-based PSCs, focusing on the three aforementioned effects.

scholarly journals Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jonathan Förste ◽  
Nikita V. Tepliakov ◽  
Stanislav Yu. Kruchinin ◽  
Jessica Lindlau ◽  
Victor Funk ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Layer Transition ◽  
General Terms ◽  
Indirect Excitons ◽  
Metal Dichalcogenides ◽  
Experimental Findings ◽  
Experimental And Theoretical Studies

Abstract The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. Here, we present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe2 monolayer and bilayer crystals embedded in a field effect device for active doping control. We develop theoretical methods to calculate the exciton g-factors from first principles for all possible spin-valley configurations of excitons in monolayer and bilayer WSe2 including valley-indirect excitons. Our theoretical and experimental findings shed light on some of the characteristic photoluminescence peaks observed for monolayer and bilayer WSe2. In more general terms, the theoretical aspects of our work provide additional means for the characterization of single and few-layer transition metal dichalcogenides, as well as their heterostructures, in the presence of external magnetic fields.

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

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