Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1',2'-d]thiophene

2013 ◽  
Vol 52 (5S1) ◽  
pp. 05DC10 ◽  
Author(s):  
Katsumasa Nakahara ◽  
Chikahiko Mitsui ◽  
Toshihiro Okamoto ◽  
Masakazu Yamagishi ◽  
Junshi Soeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Hole Transporting ◽  
Effect Transistor

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

scholarly journals Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

scholarly journals Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

CrystEngComm ◽  
2021 ◽  
Author(s):  
Tommaso Salzillo ◽  
Francesco D'Amico ◽  
Nieves Montes ◽  
Raphael Pfattner ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Polymer Binder ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.

Organic Field-effect Transistor Based on a Thin Film of Polydiacetylene Prepared from 10,12-Pentacosadiynoic Acid

2006 ◽  
Vol 35 (1) ◽  
pp. 20-21 ◽  
Author(s):  
Tomohiro Koyanagi ◽  
Masanori Muratsubaki ◽  
Yoshinobu Hosoi ◽  
Takanori Shibata ◽  
Ken Tsutsui ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

2006 ◽  
Vol 965 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Taishi Takenobu ◽  
Naoya Komatsu ◽  
Yusuke Suto ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Insulator ◽  
High K ◽  
High Carrier ◽  
Effect Transistor ◽  
High Dielectric

ABSTRACTHigh quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

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