Selective Etching of Magnetic Tunnel Junction Materials Using CO/NH3Gas Mixture in Radio Frequency Pulse-Biased Inductively Coupled Plasmas

2013 ◽  
Vol 52 (5S2) ◽  
pp. 05EB03 ◽  
Author(s):  
Min Hwan Jeon ◽  
Hoe Jun Kim ◽  
Kyung Che Yang ◽  
Se Koo Kang ◽  
Kyong Nam Kim ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Selective Etching ◽  
Radio Frequency Pulse ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas ◽  
Frequency Pulse

Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

2014 ◽  
Vol 23 (11) ◽  
pp. 115202 ◽  
Author(s):  
Fei Gao ◽  
Yu-Ru Zhang ◽  
Shu-Xia Zhao ◽  
Xue-Chun Li ◽  
You-Nian Wang
Keyword(s):  
Radio Frequency ◽  
Dynamic Behavior ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Discharge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias

2021 ◽  
Vol 28 (6) ◽  
pp. 063504
Author(s):  
Min Young Yoon ◽  
H. J. Yeom ◽  
Jung Hyung Kim ◽  
Won Chegal ◽  
Yong Jai Cho ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Atomic Layer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas ◽  
Atomic Layer Etching
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