Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication

2013 ◽  
Vol 52 (5S2) ◽  
pp. 05EC01 ◽  
Author(s):  
Kohei Sakaike ◽  
Yoshitaka Kobayashi ◽  
Shogo Nakamura ◽  
Shohei Hayashi ◽  
Muneki Akazawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Semiconductor Diode ◽  
Layer Transfer ◽  
Semiconductor Diode Laser ◽  
Amorphous Si ◽  
Si Films ◽  
Transistor Fabrication

Layer Transfer and Simultaneous Activation of Phosphorus Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser Irradiation

2012 ◽  
Vol 1426 ◽  
pp. 275-280
Author(s):  
Yoshitaka Kobayashi ◽  
Kohei Sakaike ◽  
Shogo Nakamura ◽  
Mitsuhisa Ikeda ◽  
Akio Ohta ◽  
...  
Keyword(s):  
Diode Laser ◽  
Near Infrared ◽  
Optical Microscope ◽  
Semiconductor Diode ◽  
Original Form ◽  
High Electron ◽  
Layer Transfer ◽  
Semiconductor Diode Laser ◽  
Simultaneous Activation ◽  
Si Films

ABSTRACTLayer transfer and simultaneous activation of phosphorus atoms in Si films induced by semiconductor diode laser (SDL) irradiation have been investigated. Phosphorus-doped a-Si films supported by columns on a starting substrate (quartz) and a counter substrate (glass) were closely contacted face-to-face, and an 812 nm light from a SDL was irradiated to the a-Si films from the backside of the starting substrate. After SDL irradiation, 20μm wide and 1000μm long Si films were transferred to the counter substrate and were crystallized simultaneously. From optical microscope images, it was confirmed that the original form was completely maintained after the film transfer. The electrical conductivity of transferred Si film was as high as 708 S/cm. Hall measurement of the films revealed very high electron concentration of 9.5×1020 cm-3, which indicated efficient doping is achieved by the laser transfer technique.

Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

2007 ◽  
Vol 46 (3B) ◽  
pp. 1276-1279 ◽  
Author(s):  
Kohei Sakaike ◽  
Seiichiro Higashi ◽  
Hirotaka Kaku ◽  
Hideki Murakami ◽  
Seiichi Miyazaki
Keyword(s):  
Laser Irradiation ◽  
Diode Laser ◽  
Semiconductor Diode ◽  
Semiconductor Diode Laser ◽  
Si Films ◽  
Melting And Solidification

n-ZnO channel based transparent thin film transistor: Fabrication and characterization

2013 ◽  
Author(s):  
Florin Constantin Comanescu ◽  
Munizer Purica ◽  
Elena Budianu ◽  
Felicia Iacomi ◽  
Bogdana Mitu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Fabrication And Characterization ◽  
Transistor Fabrication ◽  
Transparent Thin Film Transistor

Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique

2014 ◽  
Vol 64 (10) ◽  
pp. 17-22 ◽  
Author(s):  
K. Sakaike ◽  
M. Akazawa ◽  
A. Nakagawa ◽  
S. Higashi
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Layer Transfer ◽  
Silicon Thin Film ◽  
Meniscus Force

Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor

2018 ◽  
Vol 10 (36) ◽  
pp. 30541-30547 ◽  
Author(s):  
Hyun-Mo Lee ◽  
Hyun-Jun Jeong ◽  
Kyung-Chul Ok ◽  
You Seung Rim ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Energy Band ◽  
Near Infrared ◽  
Thin Film Transistor
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