Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor

2018 ◽  
Vol 10 (36) ◽  
pp. 30541-30547 ◽  
Author(s):  
Hyun-Mo Lee ◽  
Hyun-Jun Jeong ◽  
Kyung-Chul Ok ◽  
You Seung Rim ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Energy Band ◽  
Near Infrared ◽  
Thin Film Transistor

Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer

2017 ◽  
Vol 28 (47) ◽  
pp. 475206 ◽  
Author(s):  
Sang Woo Pak ◽  
Dongil Chu ◽  
Da Ye Song ◽  
Seung Kyo Lee ◽  
Eun Kyu Kim
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Absorbing Layer

Near-infrared femtosecond laser-processed thin-film transistor

2005 ◽  
Author(s):  
Zun-Hao Chen ◽  
Jia-Min Shieh ◽  
Bau-Tong Dai ◽  
Yi-Chao Wang ◽  
Ci-Ling Pan
Keyword(s):  
Thin Film ◽  
Femtosecond Laser ◽  
Near Infrared ◽  
Thin Film Transistor

Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application

2013 ◽  
Vol 667 ◽  
pp. 511-515 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Doping Concentration ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior
Sign in / Sign up

Export Citation Format

Share Document