Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique

2014 ◽  
Vol 64 (10) ◽  
pp. 17-22 ◽  
Author(s):  
K. Sakaike ◽  
M. Akazawa ◽  
A. Nakagawa ◽  
S. Higashi
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Layer Transfer ◽  
Silicon Thin Film ◽  
Meniscus Force

A High-Performance Polycrystalline Silicon Thin-Film Transistor Using Metal-Induced Crystallization with Ni Solution

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7193-7197 ◽  
Author(s):  
Soo Young Yoon ◽  
Sung Ki Kim ◽  
Jae Young Oh ◽  
YoungJin Choi ◽  
Woo Sung Shon ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

1996 ◽  
Vol 424 ◽  
Author(s):  
Seok-Woon Lee ◽  
Byung-IL Lee ◽  
Tae-Hyung Ihn ◽  
Tae-Kyung Kim ◽  
Young-Tae Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Thin Nickel ◽  
One Step ◽  
Lateral Crystallization ◽  
Si Films

AbstractHigh performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

scholarly journals Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

2018 ◽  
Author(s):  
Kyungsoo Jang ◽  
Pham Duy Phong ◽  
Yoonjung Lee ◽  
Joonghyun Park ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Surface Passivation ◽  
Thin Film Transistor ◽  
Passivation Layer ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Hydrogen Dilution ◽  
Defect Sites

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

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