High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
2013 ◽
Vol 52
(8S)
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pp. 08JN18
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2005 ◽
Vol 44
(11)
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pp. 7889-7891
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2006 ◽
Vol 45
(No. 39)
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pp. L1048-L1050
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2001 ◽
Vol 188
(1)
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pp. 219-222
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2011 ◽
Vol 50
(1S1)
◽
pp. 01AD03
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