Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

2011 ◽  
Vol 4 (11) ◽  
pp. 114102 ◽  
Author(s):  
Herwig Hahn ◽  
Gerrit Lükens ◽  
Nico Ketteniss ◽  
Holger Kalisch ◽  
Andrei Vescan
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Recessed Gate

scholarly journals Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

2018 ◽  
Vol 123 (2) ◽  
pp. 024902 ◽  
Author(s):  
Fengzai Tang ◽  
Kean B. Lee ◽  
Ivor Guiney ◽  
Martin Frentrup ◽  
Jonathan S. Barnard ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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