High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures

2012 ◽  
Vol 5 (8) ◽  
pp. 084201 ◽  
Author(s):  
Narihiko Maeda ◽  
Masanobu Hiroki ◽  
Satoshi Sasaki ◽  
Yuichi Harada
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Characteristics ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Recessed Gate

High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate

2011 ◽  
Vol 50 (1S1) ◽  
pp. 01AD03 ◽  
Author(s):  
Takayuki Sugiyama ◽  
Hiroshi Amano ◽  
Daisuke Iida ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
High Temperature Operation

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

2011 ◽  
Vol 4 (11) ◽  
pp. 114102 ◽  
Author(s):  
Herwig Hahn ◽  
Gerrit Lükens ◽  
Nico Ketteniss ◽  
Holger Kalisch ◽  
Andrei Vescan
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Recessed Gate

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

2012 ◽  
Vol 51 (5R) ◽  
pp. 054103 ◽  
Author(s):  
Zhiyuan He ◽  
Jialin Li ◽  
Yuhua Wen ◽  
Zhen Shen ◽  
Yao Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Recessed Gate

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

2012 ◽  
Vol 51 ◽  
pp. 054103 ◽  
Author(s):  
Zhiyuan He ◽  
Jialin Li ◽  
Yuhua Wen ◽  
Zhen Shen ◽  
Yao Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Recessed Gate

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties ◽  
Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

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