Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors

IET Power Electronics ◽

10.1049/iet-pel.2017.0438 ◽

2018 ◽

Vol 11 (4) ◽

pp. 675-680 ◽

Author(s):

Ashwani Kumar ◽

Maria Merlyne De Souza

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

Applied Physics Express ◽

10.1143/apex.4.114101 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114101 ◽

Author(s):

Daniel Morgan ◽

Mahbuba Sultana ◽

Husna Fatima ◽

Sho Sugiyama ◽

Qhalid Fareed ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation

Applied Physics Letters ◽

10.1063/1.3446891 ◽

2010 ◽

Vol 96 (24) ◽

pp. 243506 ◽

Author(s):

Suk Choi ◽

Hee Jin Kim ◽

Zachary Lochner ◽

Yun Zhang ◽

Yi-Che Lee ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Enhancement Mode ◽

Mode Operation ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Applied Physics Express ◽

10.1143/apex.4.114102 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114102 ◽

Author(s):

Herwig Hahn ◽

Gerrit Lükens ◽

Nico Ketteniss ◽

Holger Kalisch ◽

Andrei Vescan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

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Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Journal of Applied Physics ◽

10.1063/1.5006255 ◽

2018 ◽

Vol 123 (2) ◽

pp. 024902 ◽

Author(s):

Fengzai Tang ◽

Kean B. Lee ◽

Ivor Guiney ◽

Martin Frentrup ◽

Jonathan S. Barnard ◽

...

Keyword(s):

Chemical Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.115 ◽

2007 ◽

Vol 46 (1) ◽

pp. 115-118 ◽

Author(s):

Takahiro Fujii ◽

Norio Tsuyukuchi ◽

Yoshikazu Hirose ◽

Motoaki Iwaya ◽

Satoshi Kamiyama ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors

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Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers

Journal of The Electrochemical Society ◽

10.1149/2.0471508jes ◽

2015 ◽

Vol 162 (8) ◽

pp. H522-H526 ◽

Author(s):

Wen-Chia Liao ◽

Cheng-Hsin Chen ◽

Chia-Wei Hsu ◽

Yue-Ming Hsin ◽

Jen-Inn Chyi

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Buffer Layers ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

Applied Physics Letters ◽

10.1063/1.3553229 ◽

2011 ◽

Vol 98 (7) ◽

pp. 072108 ◽

Author(s):

Yuhua Wen ◽

Zhiyuan He ◽

Jialin Li ◽

Ruihong Luo ◽

Peng Xiang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Selective Area Growth ◽

Growth Technique ◽

Enhancement Mode ◽

Selective Area ◽

Area Growth ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab5607 ◽

2019 ◽

Vol 35 (1) ◽

pp. 015020 ◽

Author(s):

Azwar Abdulsalam ◽

Gourab Dutta

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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