High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors
2014 ◽
Vol 65
(4)
◽
pp. 526-531
◽
Keyword(s):
2005 ◽
Vol 2
(7)
◽
pp. 2651-2654
◽
2002 ◽
2013 ◽
Vol 52
(8S)
◽
pp. 08JN18
◽
2012 ◽
Vol 51
(5R)
◽
pp. 054103
◽