Erratum: “Initial Oxidation of Si(001) Induced by Translational Kinetic Energy of O2 Supersonic Molecular Beams”

2015 ◽  
Vol 54 (3) ◽  
pp. 039203
Author(s):  
Akitaka Yoshigoe ◽  
Mutsumi Sano ◽  
Yuden Teraoka
Keyword(s):  
Kinetic Energy ◽  
Molecular Beams ◽  
Initial Oxidation ◽  
Supersonic Molecular Beams

Initial Oxidation of Si(001) Induced by the Translational Kinetic Energy of O2Supersonic Molecular Beams

2000 ◽  
Vol 39 (Part 1, No. 12B) ◽  
pp. 7026-7030 ◽  
Author(s):  
Akitaka Yoshigoe ◽  
Mutsumi Sano ◽  
Yuden Teraoka
Keyword(s):  
Kinetic Energy ◽  
Molecular Beams ◽  
Initial Oxidation

Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

1997 ◽  
Vol 482 ◽  
Author(s):  
E. Chen ◽  
S. Zhang ◽  
A. Michel ◽  
R. F. Davis ◽  
H. H. Lamb
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Kinetic Energy ◽  
Molecular Beams ◽  
Concomitant Increase ◽  
Limited Growth ◽  
Modest Increase ◽  
Homoepitaxial Growth ◽  
Supersonic Molecular Beams ◽  
Incorporation Efficiency

AbstractHomoepitaxial growth of GaN on MOCVD-grown GaN/AlN/6H-SiC substrates was investigated using NH3-seeded supersonic molecular beams and an effusive Ga source. Ga-limited growth is observed at 730 and 770°C for incident Ga fluxes ≤ 1.2×1015 cm−2 s−1 using a 0.25 eV NH3 beam. A Ga incorporation efficiency of 20–25% is observed under these conditions. Increasing NH3 kinetic energy in the 0.25 to 0.61 eV range results in a modest increase in the GaN growth rate which we ascribe to an enhancement in NH3 reactivity. A concomitant increase in surface roughness is observed with increasing GaN growth rate.

scholarly journals Synthesis of single layer graphene on Cu(111) by C60 supersonic molecular beam epitaxy

RSC Advances ◽  
2016 ◽  
Vol 6 (44) ◽  
pp. 37982-37993 ◽  
Author(s):  
Roberta Tatti ◽  
Lucrezia Aversa ◽  
Roberto Verucchi ◽  
Emanuele Cavaliere ◽  
Giovanni Garberoglio ◽  
...  
Keyword(s):  
Kinetic Energy ◽  
Molecular Beam ◽  
Materials Science ◽  
Single Layer ◽  
Molecular Beams ◽  
Single Layer Graphene ◽  
Physical Processes ◽  
Supersonic Molecular Beam ◽  
Layer Graphene ◽  
High Kinetic Energy

High kinetic energy impacts between inorganic surfaces and molecular beams seeded by organics represent a fundamental tool in materials science, particularly when they activate chemical–physical processes leading to nanocrystals' growth.

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