Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy

2004 ◽  
Vol 272 (1-4) ◽  
pp. 438-443 ◽  
Author(s):  
Shugo Nitta ◽  
Jun Yamamoto ◽  
Yoshihisa Koyama ◽  
Yuzaburoh Ban ◽  
Kiyohide Wakao ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Mass Production ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates ◽  
Production Type ◽  
Step Growth

High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy

2016 ◽  
Vol 56 (1) ◽  
pp. 015504 ◽  
Author(s):  
Shota Katsuno ◽  
Toshiki Yasuda ◽  
Koudai Hagiwara ◽  
Norikatsu Koide ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

2006 ◽  
Vol 88 (24) ◽  
pp. 241914 ◽  
Author(s):  
D. Martin ◽  
J. Napierala ◽  
M. Ilegems ◽  
R. Butté ◽  
N. Grandjean
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

2011 ◽  
Vol 40 (8) ◽  
pp. 1790-1794 ◽  
Author(s):  
S. R. Rao ◽  
S. S. Shintri ◽  
J. K. Markunas ◽  
R. N. Jacobs ◽  
I. B. Bhat
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Substrates

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure
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