Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CN07 ◽  
Author(s):  
Satoshi Takaya ◽  
Tetsufumi Tanamoto ◽  
Hiroki Noguchi ◽  
Kazutaka Ikegami ◽  
Keiko Abe ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tunnel Barrier ◽  
Access Memory ◽  
Barrier Breakdown ◽  
Oxide Tunnel

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Current Status ◽  
Access Memory ◽  
Magnetic Random Access Memory

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

2007 ◽  
Vol 19 (16) ◽  
pp. 165209 ◽  
Author(s):  
Zhitao Diao ◽  
Zhanjie Li ◽  
Shengyuang Wang ◽  
Yunfei Ding ◽  
Alex Panchula ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory

Progress and Prospects of Spin Transfer Torque Random Access Memory

2012 ◽  
Vol 48 (11) ◽  
pp. 3025-3030 ◽  
Author(s):  
E. Chen ◽  
D. Apalkov ◽  
A. Driskill-Smith ◽  
A. Khvalkovskiy ◽  
D. Lottis ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory
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